Light-induced capacitance enhancement and successive carrier escape in InGaN/GaN multiple quantum wells

Jengsu Yoo; Yoonsung Nam; Tae Soo Kim; Gunwoo Jung; Jung Hoon Song; Soo Kyung Chang

doi:10.1063/1.5108915

Light-induced capacitance enhancement and successive carrier escape in InGaN/GaN multiple quantum wells

Jengsu Yoo, Yoonsung Nam, Tae Soo Kim, Gunwoo Jung, Jung Hoon Song, Soo Kyung Chang

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We observed large enhancement of capacitance with strong voltage sensitivity in InGaN/GaN multiple quantum wells with additional laser illuminations. We have found that the observed negative differential capacitance and its related capacitance peaks in the capacitance-voltage profile are due to the photogenerated charge separation and accumulation at the well/barrier interfaces and its subsequent carrier escape by the applied forward bias. By analyzing temperature dependent photocurrent spectra simultaneously, it is shown that photocarrier separation and strong carrier escape simultaneously occur in an individual quantum well. We can analyze the contribution of a single individual quantum well to the total capacitance of the device, resulting from the nanometer scale carrier separation and accumulation, and clarify the detailed process of accumulation and escape of carriers in the respective quantum wells.

Original language	English
Article number	024503
Journal	Journal of Applied Physics
Volume	127
Issue number	2
DOIs	https://doi.org/10.1063/1.5108915
Publication status	Published - 2020 Jan 14

Bibliographical note

Funding Information:
This work was supported by the Ministry of Knowledge Economy (MKE, Korea) under the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No. 2017R1D1A3A03000947) and by the research grant of the Kongju National University in 2019. The authors would like to thank Professor Dong-Soo Shin from Hanyang University for his kind help with the APSYS calculation.

Publisher Copyright:
© 2020 Author(s).

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Physics and Astronomy(all)

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10.1063/1.5108915

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title = "Light-induced capacitance enhancement and successive carrier escape in InGaN/GaN multiple quantum wells",

abstract = "We observed large enhancement of capacitance with strong voltage sensitivity in InGaN/GaN multiple quantum wells with additional laser illuminations. We have found that the observed negative differential capacitance and its related capacitance peaks in the capacitance-voltage profile are due to the photogenerated charge separation and accumulation at the well/barrier interfaces and its subsequent carrier escape by the applied forward bias. By analyzing temperature dependent photocurrent spectra simultaneously, it is shown that photocarrier separation and strong carrier escape simultaneously occur in an individual quantum well. We can analyze the contribution of a single individual quantum well to the total capacitance of the device, resulting from the nanometer scale carrier separation and accumulation, and clarify the detailed process of accumulation and escape of carriers in the respective quantum wells.",

author = "Jengsu Yoo and Yoonsung Nam and Kim, {Tae Soo} and Gunwoo Jung and Song, {Jung Hoon} and Chang, {Soo Kyung}",

note = "Funding Information: This work was supported by the Ministry of Knowledge Economy (MKE, Korea) under the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No. 2017R1D1A3A03000947) and by the research grant of the Kongju National University in 2019. The authors would like to thank Professor Dong-Soo Shin from Hanyang University for his kind help with the APSYS calculation. Publisher Copyright: {\textcopyright} 2020 Author(s).",

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doi = "10.1063/1.5108915",

language = "English",

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T1 - Light-induced capacitance enhancement and successive carrier escape in InGaN/GaN multiple quantum wells

AU - Yoo, Jengsu

AU - Nam, Yoonsung

AU - Kim, Tae Soo

AU - Jung, Gunwoo

AU - Song, Jung Hoon

AU - Chang, Soo Kyung

N1 - Funding Information: This work was supported by the Ministry of Knowledge Economy (MKE, Korea) under the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No. 2017R1D1A3A03000947) and by the research grant of the Kongju National University in 2019. The authors would like to thank Professor Dong-Soo Shin from Hanyang University for his kind help with the APSYS calculation. Publisher Copyright: © 2020 Author(s).

PY - 2020/1/14

Y1 - 2020/1/14

N2 - We observed large enhancement of capacitance with strong voltage sensitivity in InGaN/GaN multiple quantum wells with additional laser illuminations. We have found that the observed negative differential capacitance and its related capacitance peaks in the capacitance-voltage profile are due to the photogenerated charge separation and accumulation at the well/barrier interfaces and its subsequent carrier escape by the applied forward bias. By analyzing temperature dependent photocurrent spectra simultaneously, it is shown that photocarrier separation and strong carrier escape simultaneously occur in an individual quantum well. We can analyze the contribution of a single individual quantum well to the total capacitance of the device, resulting from the nanometer scale carrier separation and accumulation, and clarify the detailed process of accumulation and escape of carriers in the respective quantum wells.

AB - We observed large enhancement of capacitance with strong voltage sensitivity in InGaN/GaN multiple quantum wells with additional laser illuminations. We have found that the observed negative differential capacitance and its related capacitance peaks in the capacitance-voltage profile are due to the photogenerated charge separation and accumulation at the well/barrier interfaces and its subsequent carrier escape by the applied forward bias. By analyzing temperature dependent photocurrent spectra simultaneously, it is shown that photocarrier separation and strong carrier escape simultaneously occur in an individual quantum well. We can analyze the contribution of a single individual quantum well to the total capacitance of the device, resulting from the nanometer scale carrier separation and accumulation, and clarify the detailed process of accumulation and escape of carriers in the respective quantum wells.

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JF - Journal of Applied Physics

IS - 2

M1 - 024503

ER -

Light-induced capacitance enhancement and successive carrier escape in InGaN/GaN multiple quantum wells

Abstract

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