Light-emitting properties of Si-ion-irradiated SiO2/Si/SiO2 layers

Hyo Bae Kim, Jeong Hun Son, Chung Nam Whang, Keun Hwa Chae, Won Seok Lee, Seongil Im, Sang Ok Kim, Jung Ju Woo, Jong Han Song

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6 Citations (Scopus)


Photoluminescence (PL) from a Si-ion-irradiated SiO2/Si/SiO2 layer on a Si substrate at room temperature has been studied to elucidate the luminescence behavior under various post-annealing treatments. A luminescence band around 450 nm is observed from the as-irradiated sample. This luminescence band is found to originate from the diamagnetic defect, known as the B2 band, generated by Si ion irradiation. The intensity of this band increases with the increasing annealing temperature up to a critical temperature after Si irradiation. The B2 band activates at a lower temperature than the radiative defect related to the PL peak around 600 nm. After the ion-irradiated samples are annealed at 1100 °C, the PL peaks around 450 nm and 600 nm originating from radiative defects disappear, and a new PL peak appears around 720 nm. This luminescence band is associated with the ∼5-nm-sized Si nanocrystals produced along the Si layer between SiO2 layers, as determined by high resolution transmission electron microscopy. The intensity of the PL peak from the ion-irradiated SiO2/Si/SiO2 layer is stronger than that from the Si-implanted SiO2 film and that from the SiO2/Si/SiO2 layer annealed without Si irradiation.

Original languageEnglish
Pages (from-to)466-470
Number of pages5
JournalJournal of the Korean Physical Society
Issue number4
Publication statusPublished - 2000 Oct

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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