Layout influence on microwave performance of graphene field effect transistors

M. A. Giambra, A. Benfante, L. Zeiss, R. Pernice, V. Miseikis, W. H.P. Pernice, M. H. Jang, J. H. Ahn, A. C. Cino, S. Stivala, E. Calandra, A. C. Busacca, R. Danneau

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gatelength space which maximises the microwave performance.

Original languageEnglish
Pages (from-to)984-986
Number of pages3
JournalElectronics Letters
Issue number16
Publication statusPublished - 2018 Aug 9

Bibliographical note

Publisher Copyright:
© The Institution of Engineering and Technology 2018.

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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