Layer dependence and gas molecule absorption property in MoS 2 Schottky diode with asymmetric metal contacts

Hyong Seo Yoon; Hang Eun Joe; Sun Jun Kim; Hee Sung Lee; Seongil Im; Byung Kwon Min; Seong Chan Jun

doi:10.1038/srep10440

Layer dependence and gas molecule absorption property in MoS ₂ Schottky diode with asymmetric metal contacts

Hyong Seo Yoon, Hang Eun Joe, Sun Jun Kim, Hee Sung Lee, Seongil Im, Byung Kwon Min, Seong Chan Jun

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

Surface potential measurement on atomically thin MoS ₂ flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS ₂ thin flakes. Schottky diode devices using mono-and multi-layer MoS ₂ channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS ₂ thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH₃ and NO ₂ gases based on the metal work function and the Schottky barrier height change.

Original language	English
Article number	10440
Journal	Scientific reports
Volume	5
DOIs	https://doi.org/10.1038/srep10440
Publication status	Published - 2015 May 20

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title = "Layer dependence and gas molecule absorption property in MoS 2 Schottky diode with asymmetric metal contacts",

abstract = "Surface potential measurement on atomically thin MoS 2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS 2 thin flakes. Schottky diode devices using mono-and multi-layer MoS 2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS 2 thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH3 and NO 2 gases based on the metal work function and the Schottky barrier height change.",

author = "Yoon, {Hyong Seo} and Joe, {Hang Eun} and {Jun Kim}, Sun and Lee, {Hee Sung} and Seongil Im and Min, {Byung Kwon} and Jun, {Seong Chan}",

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T1 - Layer dependence and gas molecule absorption property in MoS 2 Schottky diode with asymmetric metal contacts

AU - Yoon, Hyong Seo

AU - Joe, Hang Eun

AU - Jun Kim, Sun

AU - Lee, Hee Sung

AU - Im, Seongil

AU - Min, Byung Kwon

AU - Jun, Seong Chan

PY - 2015/5/20

Y1 - 2015/5/20

N2 - Surface potential measurement on atomically thin MoS 2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS 2 thin flakes. Schottky diode devices using mono-and multi-layer MoS 2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS 2 thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH3 and NO 2 gases based on the metal work function and the Schottky barrier height change.

AB - Surface potential measurement on atomically thin MoS 2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS 2 thin flakes. Schottky diode devices using mono-and multi-layer MoS 2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS 2 thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH3 and NO 2 gases based on the metal work function and the Schottky barrier height change.

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JO - Scientific Reports

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Layer dependence and gas molecule absorption property in MoS ₂ Schottky diode with asymmetric metal contacts

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