Layer-controlled, wafer-scale, and conformal synthesis of tungsten disulfide nanosheets using atomic layer deposition

Jeong Gyu Song, Jusang Park, Wonseon Lee, Taejin Choi, Hanearl Jung, Chang Wan Lee, Sung Hwan Hwang, Jae Min Myoung, Jae Hoon Jung, Soo Hyun Kim, Clement Lansalot-Matras, Hyungjun Kim

Research output: Contribution to journalArticlepeer-review

300 Citations (Scopus)


The synthesis of atomically thin transition-metal disulfides (MS 2) with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this work, we describe a process for the synthesis of WS2 nanosheets through the sulfurization of an atomic layer deposition (ALD) WO 3 film with systematic layer controllability and wafer-level uniformity. The X-ray photoemission spectroscopy, Raman, and photoluminescence measurements exhibit that the ALD-based WS2 nanosheets have good stoichiometry, clear Raman shift, and bandgap dependence as a function of the number of layers. The electron mobility of the monolayer WS2 measured using a field-effect transistor (FET) with a high-k dielectric gate insulator is shown to be better than that of CVD-grown WS2, and the subthreshold swing is comparable to that of an exfoliated MoS2 FET device. Moreover, by utilizing the high conformality of the ALD process, we have developed a process for the fabrication of WS2 nanotubes.

Original languageEnglish
Pages (from-to)11333-11340
Number of pages8
JournalACS Nano
Issue number12
Publication statusPublished - 2013 Dec 23

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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