Late-news paper:4 inch QVGA AMOLED driven by the threshold voltage controlled amorphous GIZO (Ga2O3-In2O 3-ZnO) TFT

Kyoung Seok Son; Tae Sang Kim; Ji Sim Jung; Myung Kwan Ryu; Kyung Bae Park; Byung Wook Yoo; Jung Woo Kim; Young Gu Lee; Jang Yeon Kwon; Sang Yoon Lee; Jong Min Kim

doi:10.1889/1.3069743

Late-news paper:4 inch QVGA AMOLED driven by the threshold voltage controlled amorphous GIZO (Ga₂O₃-In₂O ₃-ZnO) TFT

Kyoung Seok Son, Tae Sang Kim, Ji Sim Jung, Myung Kwan Ryu, Kyung Bae Park, Byung Wook Yoo, Jung Woo Kim, Young Gu Lee, Jang Yeon Kwon, Sang Yoon Lee, Jong Min Kim

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

32 Citations (Scopus)

Abstract

We successfully fabricated GIZO (Ga₂O₃-In ₂O₃-ZnO) TFTs with high mobility of 2.6 cm²/Vs and threshold voltage standard deviation of 0.7V which is comparable to that of a-Si TFTs. Because conventional 5 mask process and bottom gate TFT structure of back channel etch type with channel length of 5 μn is used, it is expected to be transferred to mass production line in near future. Also we report the dependency of threshold voltage on the post process after the back surface of GIZO is exposed and suggest the effective method for controlling the threshold voltage of amorphous GIZO TFTs. Finally we demonstrate 4 inch QVGA AMOLED display driven by GIZO TFTs.

Original language	English
Pages (from-to)	633-636
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	39
Issue number	2
DOIs	https://doi.org/10.1889/1.3069743
Publication status	Published - 2008
Event	2008 SID International Symposium - Los Angeles, CA, United States Duration: 2008 May 20 → 2008 May 21

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1889/1.3069743

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title = "Late-news paper:4 inch QVGA AMOLED driven by the threshold voltage controlled amorphous GIZO (Ga2O3-In2O 3-ZnO) TFT",

abstract = "We successfully fabricated GIZO (Ga2O3-In 2O3-ZnO) TFTs with high mobility of 2.6 cm2/Vs and threshold voltage standard deviation of 0.7V which is comparable to that of a-Si TFTs. Because conventional 5 mask process and bottom gate TFT structure of back channel etch type with channel length of 5 μn is used, it is expected to be transferred to mass production line in near future. Also we report the dependency of threshold voltage on the post process after the back surface of GIZO is exposed and suggest the effective method for controlling the threshold voltage of amorphous GIZO TFTs. Finally we demonstrate 4 inch QVGA AMOLED display driven by GIZO TFTs.",

author = "Son, {Kyoung Seok} and Kim, {Tae Sang} and Jung, {Ji Sim} and Ryu, {Myung Kwan} and Park, {Kyung Bae} and Yoo, {Byung Wook} and Kim, {Jung Woo} and Lee, {Young Gu} and Kwon, {Jang Yeon} and Lee, {Sang Yoon} and Kim, {Jong Min}",

year = "2008",

doi = "10.1889/1.3069743",

language = "English",

volume = "39",

pages = "633--636",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "2",

note = "2008 SID International Symposium ; Conference date: 20-05-2008 Through 21-05-2008",

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T1 - Late-news paper:4 inch QVGA AMOLED driven by the threshold voltage controlled amorphous GIZO (Ga2O3-In2O 3-ZnO) TFT

AU - Son, Kyoung Seok

AU - Kim, Tae Sang

AU - Jung, Ji Sim

AU - Ryu, Myung Kwan

AU - Park, Kyung Bae

AU - Yoo, Byung Wook

AU - Kim, Jung Woo

AU - Lee, Young Gu

AU - Kwon, Jang Yeon

AU - Lee, Sang Yoon

AU - Kim, Jong Min

PY - 2008

Y1 - 2008

N2 - We successfully fabricated GIZO (Ga2O3-In 2O3-ZnO) TFTs with high mobility of 2.6 cm2/Vs and threshold voltage standard deviation of 0.7V which is comparable to that of a-Si TFTs. Because conventional 5 mask process and bottom gate TFT structure of back channel etch type with channel length of 5 μn is used, it is expected to be transferred to mass production line in near future. Also we report the dependency of threshold voltage on the post process after the back surface of GIZO is exposed and suggest the effective method for controlling the threshold voltage of amorphous GIZO TFTs. Finally we demonstrate 4 inch QVGA AMOLED display driven by GIZO TFTs.

AB - We successfully fabricated GIZO (Ga2O3-In 2O3-ZnO) TFTs with high mobility of 2.6 cm2/Vs and threshold voltage standard deviation of 0.7V which is comparable to that of a-Si TFTs. Because conventional 5 mask process and bottom gate TFT structure of back channel etch type with channel length of 5 μn is used, it is expected to be transferred to mass production line in near future. Also we report the dependency of threshold voltage on the post process after the back surface of GIZO is exposed and suggest the effective method for controlling the threshold voltage of amorphous GIZO TFTs. Finally we demonstrate 4 inch QVGA AMOLED display driven by GIZO TFTs.

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DO - 10.1889/1.3069743

M3 - Conference article

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VL - 39

SP - 633

EP - 636

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 2

T2 - 2008 SID International Symposium

Y2 - 20 May 2008 through 21 May 2008

ER -

Late-news paper:4 inch QVGA AMOLED driven by the threshold voltage controlled amorphous GIZO (Ga₂O₃-In₂O ₃-ZnO) TFT

Abstract

All Science Journal Classification (ASJC) codes

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