Laser-direct photoetching of metal thin film for the electrode of transistor

Hyeongjae Lee, Hyunkwon Shin, Youngmin Jeong, Jooho Moon, Myeongkyu Lee

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10 Citations (Scopus)


We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 105 and a very low off-current level. This indicates that the metallic layer is completely etched out by this process, making an additional cleaning or etching step unnecessary.

Original languageEnglish
Article number071104
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2009

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0081142) and in partial, by another Grant No. R0A-2005-000-10011-0.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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