Laser-direct photoetching of metal thin film for the electrode of transistor

Hyeongjae Lee; Hyunkwon Shin; Youngmin Jeong; Jooho Moon; Myeongkyu Lee

doi:10.1063/1.3207823

Laser-direct photoetching of metal thin film for the electrode of transistor

Hyeongjae Lee, Hyunkwon Shin, Youngmin Jeong, Jooho Moon, Myeongkyu Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 10⁵ and a very low off-current level. This indicates that the metallic layer is completely etched out by this process, making an additional cleaning or etching step unnecessary.

Original language	English
Article number	071104
Journal	Applied Physics Letters
Volume	95
Issue number	7
DOIs	https://doi.org/10.1063/1.3207823
Publication status	Published - 2009

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0081142) and in partial, by another Grant No. R0A-2005-000-10011-0.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3207823

Cite this

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title = "Laser-direct photoetching of metal thin film for the electrode of transistor",

abstract = "We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 105 and a very low off-current level. This indicates that the metallic layer is completely etched out by this process, making an additional cleaning or etching step unnecessary.",

author = "Hyeongjae Lee and Hyunkwon Shin and Youngmin Jeong and Jooho Moon and Myeongkyu Lee",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0081142) and in partial, by another Grant No. R0A-2005-000-10011-0.",

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AU - Lee, Hyeongjae

AU - Shin, Hyunkwon

AU - Jeong, Youngmin

AU - Moon, Jooho

AU - Lee, Myeongkyu

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0081142) and in partial, by another Grant No. R0A-2005-000-10011-0.

PY - 2009

Y1 - 2009

N2 - We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 105 and a very low off-current level. This indicates that the metallic layer is completely etched out by this process, making an additional cleaning or etching step unnecessary.

AB - We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 105 and a very low off-current level. This indicates that the metallic layer is completely etched out by this process, making an additional cleaning or etching step unnecessary.

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Laser-direct photoetching of metal thin film for the electrode of transistor

Abstract

Bibliographical note

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