Laser-direct parallel patterning of metal thin films

Jin Soo Lee, Hyeong Jae Lee, Myeong Kyu Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Thin film patterning by the conventional lithographic technique requires a number of steps including the deposition, development, and removal of the photoresist layer. We report that metal thin films can be directly photoetched by a pulsed neodymium doped yttrium aluminum garnet laser beam irradiating the film surface. This process utilizes a laser-induced thermoelastic force, which plays a role to detach the film from the underlying layer. High-fidelity patterns at the micrometer scales have been fabricated using a spatially modulated laser beam. A zinc-tin-oxide thin film transistor with photoetched Al source and drain electrodes exhibited an on/off ratio higher than 10 5 and a very low off-current level. This indicates that the channel area between electrodes was completely etched out, making any additional cleaning or etching steps unnecessary. We also demonstrate that transparent thin films such as ITO can be patterned using a metal thin film as a dynamic release layer.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Number of pages2
Publication statusPublished - 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Other30th International Conference on the Physics of Semiconductors, ICPS-30
Country/TerritoryKorea, Republic of

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


Dive into the research topics of 'Laser-direct parallel patterning of metal thin films'. Together they form a unique fingerprint.

Cite this