Laser-assisted patterning of solution-processed oxide semiconductor thin film using a metal absorption layer

Hyeonggeun Yu, Hyeongjae Lee, Jinsoo Lee, Hyunkwon Shin, Myeongkyu Lee

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We present a method to pattern solution-processed oxide semiconductor thin films by all laser process. A metal thin film is first photoetched by a spatially-modulated pulsed Nd-YAG laser beam and this layer is then covered with a semiconductor film. Uniform irradiation by the same laser generates a thermo-elastic force on the underlying metal layer and this force serves to detach it from the substrate, leaving only a patterned semiconductor structure. Sharp-edged zinc-tin oxide (ZTO) patterns at the micrometer scales could be fabricated over a few square centimeters by a single pulse of 850 mJ. A mobility of 7.6 × 10-2 cm2 V-1 s-1, an on/off ratio higher than 106, and an off-current of 1.91 × 10-11 A were achieved from a thin film transistor (TFT) with the patterned ZTO channel. These values were similar to those from a reference TFT, demonstrating the feasibility of this patterning process for electronic devices.

Original languageEnglish
Pages (from-to)6-10
Number of pages5
JournalMicroelectronic Engineering
Issue number1
Publication statusPublished - 2011 Jan

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2009-0086302).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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