Large scale MoS2 nanosheet logic circuits integrated by photolithography on glass

Hyeokjae Kwon, Pyo Jin Jeon, Jin Sung Kim, Tae Young Kim, Hoyeol Yun, Sang Wook Lee, Takhee Lee, Seongil Im

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


We demonstrate 500 x 500 μm2 large scale polygrain MoS2 nanosheets and field effect transistor (FET) circuits integrated using those nanosheets, which are initially grown on SiO2/p+-Si by chemical vapor deposition but transferred onto glass substrate to be patterned by photolithography. In fact, large scale growth of two-dimensional MoS2 and its conventional way of patterning for integrated devices have remained as one of the unresolved important issues. In the present study, we achieved maximum linear mobility of ∼9 cm2 V-1 s-1 from single-domain MoS2 FET on SiO2/p+-Si substrate and 0.5-3.0 cm2 V-1 s-1 from large scale MoS2 sheet transferred onto glass. Such reduced mobility is attributed to the transfer process-induced wrinkles and crevices, domain boundaries, residue on MoS2, and loss of the back gate-charging effects that might exist due to SiO2/p+-Si substrate. Among 16 MoS2-based FETs, 13 devices successfully work (yield was more than 80%) producing NOT, NOR, and NAND logic circuits. Inverter (NOT gate) shows quite a high voltage gain over 12 at a supply voltage of 5 V, also displaying 60 μs switching speed in kilohertz dynamics.

Original languageEnglish
Article number044001
Journal2D Materials
Issue number4
Publication statusPublished - 2016 Sept 30

Bibliographical note

Publisher Copyright:
© 2016 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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