Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities

Kwang Heo; Eunhee Cho; Jee Eun Yang; Myoung Ha Kim; Minbaek Lee; Byung Yang Lee; Soon Gu Kwon; Moon Sook Lee; Moon Ho Jo; Heon Jin Choi; Taeghwan Hyeon; Seunghun Hong

doi:10.1021/nl802570m

Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities

Kwang Heo, Eunhee Cho, Jee Eun Yang, Myoung Ha Kim, Minbaek Lee, Byung Yang Lee, Soon Gu Kwon, Moon Sook Lee, Moon Ho Jo, Heon Jin Choi, Taeghwan Hyeon, Seunghun Hong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

118 Citations (Scopus)

Abstract

We present a method for assembling silicon nanowires (Si-NWs) in virtually general shape patterns using only conventional microfabrication facilities. In this method, silicon nanowires were functionalized with amine groups and dispersed in deionized water. The functionalized SiNWs exhibited positive surface charges in the suspensions, and they were selectively adsorbed and aligned onto negatively charged surface regions on solid substrates. As a proof of concepts, we demonstrated transistors based on individual SiNWs and long networks of SiNWs.

Original language	English
Pages (from-to)	4523-4527
Number of pages	5
Journal	Nano letters
Volume	8
Issue number	12
DOIs	https://doi.org/10.1021/nl802570m
Publication status	Published - 2008 Dec

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

Access to Document

10.1021/nl802570m

Cite this

@article{68ba8ba66ac54a048b0fbba662b0bc61,

title = "Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities",

abstract = "We present a method for assembling silicon nanowires (Si-NWs) in virtually general shape patterns using only conventional microfabrication facilities. In this method, silicon nanowires were functionalized with amine groups and dispersed in deionized water. The functionalized SiNWs exhibited positive surface charges in the suspensions, and they were selectively adsorbed and aligned onto negatively charged surface regions on solid substrates. As a proof of concepts, we demonstrated transistors based on individual SiNWs and long networks of SiNWs.",

author = "Kwang Heo and Eunhee Cho and Yang, {Jee Eun} and Kim, {Myoung Ha} and Minbaek Lee and Lee, {Byung Yang} and Kwon, {Soon Gu} and Lee, {Moon Sook} and Jo, {Moon Ho} and Choi, {Heon Jin} and Taeghwan Hyeon and Seunghun Hong",

year = "2008",

month = dec,

doi = "10.1021/nl802570m",

language = "English",

volume = "8",

pages = "4523--4527",

journal = "Nano letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities

AU - Heo, Kwang

AU - Cho, Eunhee

AU - Yang, Jee Eun

AU - Kim, Myoung Ha

AU - Lee, Minbaek

AU - Lee, Byung Yang

AU - Kwon, Soon Gu

AU - Lee, Moon Sook

AU - Jo, Moon Ho

AU - Choi, Heon Jin

AU - Hyeon, Taeghwan

AU - Hong, Seunghun

PY - 2008/12

Y1 - 2008/12

N2 - We present a method for assembling silicon nanowires (Si-NWs) in virtually general shape patterns using only conventional microfabrication facilities. In this method, silicon nanowires were functionalized with amine groups and dispersed in deionized water. The functionalized SiNWs exhibited positive surface charges in the suspensions, and they were selectively adsorbed and aligned onto negatively charged surface regions on solid substrates. As a proof of concepts, we demonstrated transistors based on individual SiNWs and long networks of SiNWs.

AB - We present a method for assembling silicon nanowires (Si-NWs) in virtually general shape patterns using only conventional microfabrication facilities. In this method, silicon nanowires were functionalized with amine groups and dispersed in deionized water. The functionalized SiNWs exhibited positive surface charges in the suspensions, and they were selectively adsorbed and aligned onto negatively charged surface regions on solid substrates. As a proof of concepts, we demonstrated transistors based on individual SiNWs and long networks of SiNWs.

UR - http://www.scopus.com/inward/record.url?scp=61649092562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=61649092562&partnerID=8YFLogxK

U2 - 10.1021/nl802570m

DO - 10.1021/nl802570m

M3 - Article

C2 - 19367934

AN - SCOPUS:61649092562

SN - 1530-6984

VL - 8

SP - 4523

EP - 4527

JO - Nano letters

JF - Nano letters

IS - 12

ER -

Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this