LaOx thin film deposited by direct liquid injection MOCVD

Jino Jun; Jin Hyung Jun; Doo Jin Choi

doi:10.1149/1.1561284

LaO_x thin film deposited by direct liquid injection MOCVD

Jino Jun, Jin Hyung Jun, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The properties of LaO_x thin films, which were deposited by direct liquid injection metallorganic chemical vapor deposition, were investigated. For LaO_x thin film deposited using 50 sccm oxygen gas flow rate, dielectric constant and leakage current density were 15.6 and 5.4 × 10^-3 A/cm² at -1 V, respectively, and flatband voltage was shifted from -0.12 to 0.10 V with increasing annealing temperature. The results show that the properties of LaO_x thin film deposited using 50 sccm oxygen gas flow rate are better than the properties of the other LaO_x thin films deposited using 30 or 100 sccm oxygen gas flow rate.

Original language	English
Pages (from-to)	F17-F19
Journal	Electrochemical and Solid-State Letters
Volume	6
Issue number	5
DOIs	https://doi.org/10.1149/1.1561284
Publication status	Published - 2003 May

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.1561284

Cite this

@article{52ef2b4d62034c5da5be6c7fbba99b4d,

title = "LaOx thin film deposited by direct liquid injection MOCVD",

abstract = "The properties of LaOx thin films, which were deposited by direct liquid injection metallorganic chemical vapor deposition, were investigated. For LaOx thin film deposited using 50 sccm oxygen gas flow rate, dielectric constant and leakage current density were 15.6 and 5.4 × 10-3 A/cm2 at -1 V, respectively, and flatband voltage was shifted from -0.12 to 0.10 V with increasing annealing temperature. The results show that the properties of LaOx thin film deposited using 50 sccm oxygen gas flow rate are better than the properties of the other LaOx thin films deposited using 30 or 100 sccm oxygen gas flow rate.",

author = "Jino Jun and Jun, {Jin Hyung} and Choi, {Doo Jin}",

year = "2003",

month = may,

doi = "10.1149/1.1561284",

language = "English",

volume = "6",

pages = "F17--F19",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "5",

}

TY - JOUR

T1 - LaOx thin film deposited by direct liquid injection MOCVD

AU - Jun, Jino

AU - Jun, Jin Hyung

AU - Choi, Doo Jin

PY - 2003/5

Y1 - 2003/5

N2 - The properties of LaOx thin films, which were deposited by direct liquid injection metallorganic chemical vapor deposition, were investigated. For LaOx thin film deposited using 50 sccm oxygen gas flow rate, dielectric constant and leakage current density were 15.6 and 5.4 × 10-3 A/cm2 at -1 V, respectively, and flatband voltage was shifted from -0.12 to 0.10 V with increasing annealing temperature. The results show that the properties of LaOx thin film deposited using 50 sccm oxygen gas flow rate are better than the properties of the other LaOx thin films deposited using 30 or 100 sccm oxygen gas flow rate.

AB - The properties of LaOx thin films, which were deposited by direct liquid injection metallorganic chemical vapor deposition, were investigated. For LaOx thin film deposited using 50 sccm oxygen gas flow rate, dielectric constant and leakage current density were 15.6 and 5.4 × 10-3 A/cm2 at -1 V, respectively, and flatband voltage was shifted from -0.12 to 0.10 V with increasing annealing temperature. The results show that the properties of LaOx thin film deposited using 50 sccm oxygen gas flow rate are better than the properties of the other LaOx thin films deposited using 30 or 100 sccm oxygen gas flow rate.

UR - http://www.scopus.com/inward/record.url?scp=0038711877&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038711877&partnerID=8YFLogxK

U2 - 10.1149/1.1561284

DO - 10.1149/1.1561284

M3 - Article

AN - SCOPUS:0038711877

SN - 1099-0062

VL - 6

SP - F17-F19

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 5

ER -

LaO_x thin film deposited by direct liquid injection MOCVD

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this