Kondo effect in magnetic tunnel junctions

K. I. Lee; S. J. Joo; J. H. Lee; K. Rhie; Tae Suk Kim; W. Y. Lee; K. H. Shin; B. C. Lee; P. Leclair; J. S. Lee; J. H. Park

doi:10.1103/PhysRevLett.98.107202

Kondo effect in magnetic tunnel junctions

K. I. Lee, S. J. Joo, J. H. Lee, K. Rhie, Tae Suk Kim, W. Y. Lee, K. H. Shin, B. C. Lee, P. Leclair, J. S. Lee, J. H. Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures. Resistance shows a logarithmic dependence on temperature, and resistance versus temperature exhibits a scaling behavior. Our experimental data can be explained in a consistent way by the Kondo effect in the MTJs with the Kondo temperature TK=20-30K.

Original language	English
Article number	107202
Journal	Physical review letters
Volume	98
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevLett.98.107202
Publication status	Published - 2007 Mar 6

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1103/PhysRevLett.98.107202

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title = "Kondo effect in magnetic tunnel junctions",

abstract = "Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures. Resistance shows a logarithmic dependence on temperature, and resistance versus temperature exhibits a scaling behavior. Our experimental data can be explained in a consistent way by the Kondo effect in the MTJs with the Kondo temperature TK=20-30K.",

author = "Lee, {K. I.} and Joo, {S. J.} and Lee, {J. H.} and K. Rhie and Kim, {Tae Suk} and Lee, {W. Y.} and Shin, {K. H.} and Lee, {B. C.} and P. Leclair and Lee, {J. S.} and Park, {J. H.}",

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T1 - Kondo effect in magnetic tunnel junctions

AU - Lee, K. I.

AU - Joo, S. J.

AU - Lee, J. H.

AU - Rhie, K.

AU - Kim, Tae Suk

AU - Lee, W. Y.

AU - Shin, K. H.

AU - Lee, B. C.

AU - Leclair, P.

AU - Lee, J. S.

AU - Park, J. H.

PY - 2007/3/6

Y1 - 2007/3/6

N2 - Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures. Resistance shows a logarithmic dependence on temperature, and resistance versus temperature exhibits a scaling behavior. Our experimental data can be explained in a consistent way by the Kondo effect in the MTJs with the Kondo temperature TK=20-30K.

AB - Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures. Resistance shows a logarithmic dependence on temperature, and resistance versus temperature exhibits a scaling behavior. Our experimental data can be explained in a consistent way by the Kondo effect in the MTJs with the Kondo temperature TK=20-30K.

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VL - 98

JO - Physical review letters

JF - Physical review letters

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Kondo effect in magnetic tunnel junctions

Abstract

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