Kinetic effect of additives in high temperature phosphoric acid on the etching of Si3N4/SiO2

Taegun Park, Taehyeon Kim, Changjin Son, Sangwoo Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Highly selective etching of Si3N4 to SiO2 in phosphoric acid is required for the 3D NAND integration. When a single wafer tool is introduced in this process, the process temperature needs to be well controlled. Therefore, the effect of various additives in phosphoric acid on the kinetics of the Si3N4 and SiO2 etching reaction were investigated at a higher temperature up to 200 °C in this study. The etching rates of Si3N4 and SiO2 increased whereas the activation energies decreased with the addition of either HF or NH4F. As the concentration of HF is increased, the activation energies of Si3N4 and SiO2 etching further decreased. On the other hand, Sicontaining additives increased the activation energy of SiO2 etching while the activation energy of Si3N4 etching was unchanged.

Original languageEnglish
Title of host publication16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019
EditorsKoichiro Saga, Paul W. Mertens, Takeshi Hattori, Jerzy Ruzyllo, Anthony J. Muscat
PublisherElectrochemical Society Inc.
Pages149-154
Number of pages6
Edition2
ISBN (Electronic)9781607688761
ISBN (Print)9781607688761
DOIs
Publication statusPublished - 2019
Event16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting - Atlanta, United States
Duration: 2019 Oct 132019 Oct 17

Publication series

NameECS Transactions
Number2
Volume92
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting
Country/TerritoryUnited States
CityAtlanta
Period19/10/1319/10/17

Bibliographical note

Publisher Copyright:
© The Electrochemical Society.

All Science Journal Classification (ASJC) codes

  • General Engineering

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