Ka-band SiGe HBT low noise amplifier design for simultaneous noise and input power matching

Byung Wook Min, Gabriel M. Rebeiz

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)


This letter presents the design and implementation of a Ka-band low noise amplifier (LNA). The LNA is based on a cas-code amplifier using 0.12 μm SiGe heterojunction bipolar transistors (HBT). A new design procedure for simultaneous noise and input power matching is developed considering the collector-base feedback capacitance (C μ). At 33-34 GHz, the LNA results in a measured gain of 23.5 dB, a return loss of < - 20 dB and a noise figure (NF) of 2.9 dB. The input return loss is < - 10 dB and the NF is 2.6-3.2 dB for the entire Ka-band frequency range. The LNA is 300 × 300 μm 2, consuming 6 mA from 1.8 V supply (11 mW). The output 1 dB compression power is - 6 dBm. To our knowledge, these are state-of-the-art results and show the validity of the design technique.

Original languageEnglish
Pages (from-to)891-893
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number12
Publication statusPublished - 2007 Dec

Bibliographical note

Funding Information:
Manuscript received May 12, 2007; revised June 19, 2007. This work was supported by the U.S. Army Research Laboratory under the CTA effort. B-W. Min is with the Electrical Engineering and Computer Science Department, University of Michigan, Ann Arbor, MI 49109 USA (e-mail: bmin@umich.edu.). G. M. Rebeiz is with the Electrical and Computer Engineering Department, University of California, San Diego, CA 92093 USA (e-mail: rebeiz@ece.ucsd. edu.). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LMWC.2007.910512 Fig. 1. Cascode LNA with a Miller capacitance, C replacing C at the base node.Inthisletter,Z =133 j57( );Z =76 j45( )and1=j!C = 167 j147( ) with ` = 8 m, I =2.5 mA and L =105 pH.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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