TY - GEN
T1 - Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules
AU - Min, Byung Wook
AU - Rebeiz, Gabriel M.
PY - 2007
Y1 - 2007
N2 - This paper presents a 30-38 GHz 4-bit phase shifter with an integrated LNA using a 0.12 μm SiGe BiCMOS process. The two-stage LNA is implemented using SiGe HBT, and the phase shifter is based on MOSFET switches and miniature low-pass networks. The LNA/phase shifter achieves 1±1.5 dB of gain and 5 dB noise figure at 34 GHz. The RMS phase error is less than 7° 30-38 GHz. The total chip size is 900×400 μm2 (0.36 mm2) excluding pads, and the chip consumes only 3 mA from a 1.8 V bias supply (5.4 mW). To our best knowledge, this is the first implementation of a Ka-band silicon-based phase shifter.
AB - This paper presents a 30-38 GHz 4-bit phase shifter with an integrated LNA using a 0.12 μm SiGe BiCMOS process. The two-stage LNA is implemented using SiGe HBT, and the phase shifter is based on MOSFET switches and miniature low-pass networks. The LNA/phase shifter achieves 1±1.5 dB of gain and 5 dB noise figure at 34 GHz. The RMS phase error is less than 7° 30-38 GHz. The total chip size is 900×400 μm2 (0.36 mm2) excluding pads, and the chip consumes only 3 mA from a 1.8 V bias supply (5.4 mW). To our best knowledge, this is the first implementation of a Ka-band silicon-based phase shifter.
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U2 - 10.1109/MWSYM.2007.380511
DO - 10.1109/MWSYM.2007.380511
M3 - Conference contribution
AN - SCOPUS:34748839678
SN - 1424406889
SN - 9781424406883
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 479
EP - 482
BT - 2007 IEEE MTT-S International Microwave Symposium Digest
T2 - 2007 IEEE MTT-S International Microwave Symposium, IMS 2007
Y2 - 3 June 2007 through 8 June 2007
ER -