Junction temperature measurement of InAs quantum-dot laser diodes by utilizing voltage-temperature method

Jung Hwa Jeong; Kyoung Chan Kim; Jung Il Lee; Hyun Jae Kim; Il Ki Han

doi:10.1109/LPT.2008.926802

Junction temperature measurement of InAs quantum-dot laser diodes by utilizing voltage-temperature method

Jung Hwa Jeong, Kyoung Chan Kim, Jung Il Lee, Hyun Jae Kim, Il Ki Han

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage-temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiN_x is more useful than SiO₂ to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiN_x instead of SiO₂ as the insulating layer. As a result, ground state optical power is doubled.

Original language	English
Pages (from-to)	1354-1356
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2008.926802
Publication status	Published - 2008 Aug 15

Bibliographical note

Funding Information:
Manuscript received April 2, 2008; revised May 9, 2008. This work was supported by the Korea Foundation for International Cooperation of Science and Technology (KICOS) through a grant provided by the Korean Ministry of Science and Technology (MOST) in 2007 (GRL: K2060700005-07A0500-00510).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2008.926802

Cite this

@article{22fbed4182b541759dcf7705a64237f5,

title = "Junction temperature measurement of InAs quantum-dot laser diodes by utilizing voltage-temperature method",

abstract = "Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage-temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiNx is more useful than SiO2 to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiNx instead of SiO2 as the insulating layer. As a result, ground state optical power is doubled.",

author = "Jeong, {Jung Hwa} and Kim, {Kyoung Chan} and Lee, {Jung Il} and Kim, {Hyun Jae} and Han, {Il Ki}",

note = "Funding Information: Manuscript received April 2, 2008; revised May 9, 2008. This work was supported by the Korea Foundation for International Cooperation of Science and Technology (KICOS) through a grant provided by the Korean Ministry of Science and Technology (MOST) in 2007 (GRL: K2060700005-07A0500-00510).",

year = "2008",

month = aug,

day = "15",

doi = "10.1109/LPT.2008.926802",

language = "English",

volume = "20",

pages = "1354--1356",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "16",

}

TY - JOUR

T1 - Junction temperature measurement of InAs quantum-dot laser diodes by utilizing voltage-temperature method

AU - Jeong, Jung Hwa

AU - Kim, Kyoung Chan

AU - Lee, Jung Il

AU - Kim, Hyun Jae

AU - Han, Il Ki

N1 - Funding Information: Manuscript received April 2, 2008; revised May 9, 2008. This work was supported by the Korea Foundation for International Cooperation of Science and Technology (KICOS) through a grant provided by the Korean Ministry of Science and Technology (MOST) in 2007 (GRL: K2060700005-07A0500-00510).

PY - 2008/8/15

Y1 - 2008/8/15

N2 - Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage-temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiNx is more useful than SiO2 to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiNx instead of SiO2 as the insulating layer. As a result, ground state optical power is doubled.

AB - Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage-temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiNx is more useful than SiO2 to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiNx instead of SiO2 as the insulating layer. As a result, ground state optical power is doubled.

UR - http://www.scopus.com/inward/record.url?scp=49349089391&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49349089391&partnerID=8YFLogxK

U2 - 10.1109/LPT.2008.926802

DO - 10.1109/LPT.2008.926802

M3 - Article

AN - SCOPUS:49349089391

SN - 1041-1135

VL - 20

SP - 1354

EP - 1356

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 16

ER -

Junction temperature measurement of InAs quantum-dot laser diodes by utilizing voltage-temperature method

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this