Junction formation at the interface of CdS/CuInxGa(1 - X)Se2

Soon Mi Park, Tae Gun Kim, Yong Duck Chung, Dae Hyung Cho, Jeha Kim, Kyung Joong Kim, Yeonjin Yi, Jeong Won Kim

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22 Citations (Scopus)


The interfacial band alignment and chemical composition at the cadmium sulfide (CdS)/copper indium gallium diselenide (CuInx Ga1-x Se2 : CIGS) heterojunction was investigated by photoelectron spectroscopy. Over the two different interfaces made by either thermal deposition of CdS on a CIGS film or step-by-step etching of a chemical-bath deposited (CBD)-CdS/CIGS film by Ar+ ions, the valence band maximum and conduction band minimum were determined using ultraviolet photoelectron spectroscopy and inverse photoemission spectroscopy, respectively. Concurrently, x-ray photoelectron spectroscopy was used to trace chemical changes across the interface. Both interfaces showed a In-rich and Cu-deficient profile. The thermal deposition of CdS on CIGS induces Cd-Cu intermixing and nonstoichiometric CdS formation associated with a strong band bending and high electron injection barrier. However, the CBD-CdS layer shows a rather sharp interface and negligible electron injection barrier in the conduction band, which will show better solar cell characteristics.

Original languageEnglish
Article number345302
JournalJournal of Physics D: Applied Physics
Issue number34
Publication statusPublished - 2014 Aug 30

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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