Ion shower doping of polysilicon films on polyethersulfone substrates for flexible TFT arrays

Jongman Kim, Wan Shick Hong, Sunghyun Lee, Kyung Bae Park, Do Young Kim, Ji Sim Jung, Jang Yeon Kwon, Takashi Noguchi

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1 Citation (Scopus)


A technique of ion shower doping was performed to form source-drain contacts for polysilicon thin-film transistors (TFTs) on polyethersulfone (PES) substrates. The doped layer was subsequently annealed with an excimer laser to electrically activate the dopant atoms. The doped polysilicon films on the PES substrate showed much higher sheet resistances than those on the glass substrate with the identical doping and activation conditions. Moreover, the plastic substrates is easily heated up and caused a film failure for the prolonged exposure of the ion shower doping. The effective doping time and the resulting ion dose could be increased remarkably by reducing the radio-frequency power as well as by inserting interval pulses for dopants relaxation during the ion doping. As a result, a sheet resistance value as low as 300 ohmssq. was obtained, which is low enough for a good ohmic contact.

Original languageEnglish
Pages (from-to)H61-H64
JournalElectrochemical and Solid-State Letters
Issue number7
Publication statusPublished - 2006 Jul

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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