Investigation on the interfacial reaction of SiO2/Ti0.1 W0.9 system

Hyung Ho Park; Sahn Nahm; Kyung Soo Suh; Jong Lam Lee; Kyoung Ik Cho; Kyung Soo Kim; Sin Chong Park; Jae Sung Lee; Yong Hyun Lee

doi:10.1016/0022-3093(95)00128-X

Investigation on the interfacial reaction of SiO₂/Ti_0.1 W_0.9 system

Hyung Ho Park, Sahn Nahm, Kyung Soo Suh, Jong Lam Lee, Kyoung Ik Cho, Kyung Soo Kim, Sin Chong Park, Jae Sung Lee, Yong Hyun Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The thermal behavior of antifusing device characteristic with SiO₂/Ti_0.1 W_0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400°C and 600°C, respectively. Through in situ heat treatment at 400°C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO₃. Annealing above 600°C induces decomposition of SiO₂ and results in failure of the antifusing device characteristic.

Original language	English
Pages (from-to)	149-155
Number of pages	7
Journal	Journal of Non-Crystalline Solids
Volume	187
DOIs	https://doi.org/10.1016/0022-3093(95)00128-X
Publication status	Published - 1995

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(95)00128-X

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@article{427300fa22714bf2a6fca60fa3892a9e,

title = "Investigation on the interfacial reaction of SiO2/Ti0.1 W0.9 system",

abstract = "The thermal behavior of antifusing device characteristic with SiO2/Ti0.1 W0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400°C and 600°C, respectively. Through in situ heat treatment at 400°C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO3. Annealing above 600°C induces decomposition of SiO2 and results in failure of the antifusing device characteristic.",

author = "Park, {Hyung Ho} and Sahn Nahm and Suh, {Kyung Soo} and Lee, {Jong Lam} and Cho, {Kyoung Ik} and Kim, {Kyung Soo} and Park, {Sin Chong} and Lee, {Jae Sung} and Lee, {Yong Hyun}",

year = "1995",

doi = "10.1016/0022-3093(95)00128-X",

language = "English",

volume = "187",

pages = "149--155",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

}

TY - JOUR

T1 - Investigation on the interfacial reaction of SiO2/Ti0.1 W0.9 system

AU - Park, Hyung Ho

AU - Nahm, Sahn

AU - Suh, Kyung Soo

AU - Lee, Jong Lam

AU - Cho, Kyoung Ik

AU - Kim, Kyung Soo

AU - Park, Sin Chong

AU - Lee, Jae Sung

AU - Lee, Yong Hyun

PY - 1995

Y1 - 1995

N2 - The thermal behavior of antifusing device characteristic with SiO2/Ti0.1 W0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400°C and 600°C, respectively. Through in situ heat treatment at 400°C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO3. Annealing above 600°C induces decomposition of SiO2 and results in failure of the antifusing device characteristic.

AB - The thermal behavior of antifusing device characteristic with SiO2/Ti0.1 W0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400°C and 600°C, respectively. Through in situ heat treatment at 400°C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO3. Annealing above 600°C induces decomposition of SiO2 and results in failure of the antifusing device characteristic.

UR - http://www.scopus.com/inward/record.url?scp=9344219855&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9344219855&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(95)00128-X

DO - 10.1016/0022-3093(95)00128-X

M3 - Article

AN - SCOPUS:9344219855

SN - 0022-3093

VL - 187

SP - 149

EP - 155

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -

Investigation on the interfacial reaction of SiO₂/Ti_0.1 W_0.9 system

Abstract

All Science Journal Classification (ASJC) codes

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