Investigation on the compositionally graded HfxAl yOz films for TiN based DRAM capacitor

Deok Sin Kil; Kwon Hong; Seung Jin Yeom; Han Sang Song; Ki Seon Park; Jae Sung Roh; Noh Jung Kwak; Hyun Cheol Sohn; Jin Woong Kim; Sung Wook Park

doi:10.1109/ESSDER.2005.1546662

Investigation on the compositionally graded Hf_xAl _yO_z films for TiN based DRAM capacitor

Deok Sin Kil, Kwon Hong, Seung Jin Yeom, Han Sang Song, Ki Seon Park, Jae Sung Roh, Noh Jung Kwak, Hyun Cheol Sohn, Jin Woong Kim, Sung Wook Park

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

New concept of capacitor dielectric thin film was successfully demonstrated through graded HfxAlyOz dielectric thin film accompanied by post ozone annealing for the application to DRAM capacitor. MIM capacitor with graded HfxAlyOz dielectric films showed drastically reduced leakage current and highly improved break down voltage by 0.45-0.75V maintaining the same EOT value. In the case of graded film with Hf/Al=1.5/1, EOT showed very small value of 12.3Å and leakage current could be maintained as low as 1E ^-16A/cell at +1.0V.

Original language	English
Title of host publication	Proceedings of ESSDERC 2005
Subtitle of host publication	35th European Solid-State Device Research Conference
Pages	371-374
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDER.2005.1546662
Publication status	Published - 2005
Event	ESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France Duration: 2005 Sept 12 → 2005 Sept 16

Publication series

Name	Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume	2005

Other

Other	ESSDERC 2005: 35th European Solid-State Device Research Conference
Country/Territory	France
City	Grenoble
Period	05/9/12 → 05/9/16

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ESSDER.2005.1546662

Cite this

Kil, D. S., Hong, K., Yeom, S. J., Song, H. S., Park, K. S., Roh, J. S., Kwak, N. J., Sohn, H. C., Kim, J. W., & Park, S. W. (2005). Investigation on the compositionally graded Hf_xAl _yO_z films for TiN based DRAM capacitor. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (pp. 371-374). Article 1546662 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005). https://doi.org/10.1109/ESSDER.2005.1546662

@inproceedings{c1c184ba7a2f4381b9c253c699a1ac51,

title = "Investigation on the compositionally graded HfxAl yOz films for TiN based DRAM capacitor",

abstract = "New concept of capacitor dielectric thin film was successfully demonstrated through graded HfxAlyOz dielectric thin film accompanied by post ozone annealing for the application to DRAM capacitor. MIM capacitor with graded HfxAlyOz dielectric films showed drastically reduced leakage current and highly improved break down voltage by 0.45-0.75V maintaining the same EOT value. In the case of graded film with Hf/Al=1.5/1, EOT showed very small value of 12.3{\AA} and leakage current could be maintained as low as 1E -16A/cell at +1.0V.",

author = "Kil, {Deok Sin} and Kwon Hong and Yeom, {Seung Jin} and Song, {Han Sang} and Park, {Ki Seon} and Roh, {Jae Sung} and Kwak, {Noh Jung} and Sohn, {Hyun Cheol} and Kim, {Jin Woong} and Park, {Sung Wook}",

year = "2005",

doi = "10.1109/ESSDER.2005.1546662",

language = "English",

isbn = "0780392035",

series = "Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference",

pages = "371--374",

booktitle = "Proceedings of ESSDERC 2005",

note = "ESSDERC 2005: 35th European Solid-State Device Research Conference ; Conference date: 12-09-2005 Through 16-09-2005",

}

Kil, DS, Hong, K, Yeom, SJ, Song, HS, Park, KS, Roh, JS, Kwak, NJ, Sohn, HC, Kim, JW & Park, SW 2005, Investigation on the compositionally graded Hf_xAl _yO_z films for TiN based DRAM capacitor. in Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference., 1546662, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, vol. 2005, pp. 371-374, ESSDERC 2005: 35th European Solid-State Device Research Conference, Grenoble, France, 05/9/12. https://doi.org/10.1109/ESSDER.2005.1546662

Investigation on the compositionally graded Hf_xAl _yO_z films for TiN based DRAM capacitor. / Kil, Deok Sin; Hong, Kwon; Yeom, Seung Jin et al.
Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 371-374 1546662 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - New concept of capacitor dielectric thin film was successfully demonstrated through graded HfxAlyOz dielectric thin film accompanied by post ozone annealing for the application to DRAM capacitor. MIM capacitor with graded HfxAlyOz dielectric films showed drastically reduced leakage current and highly improved break down voltage by 0.45-0.75V maintaining the same EOT value. In the case of graded film with Hf/Al=1.5/1, EOT showed very small value of 12.3Å and leakage current could be maintained as low as 1E -16A/cell at +1.0V.

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Kil DS, Hong K, Yeom SJ, Song HS, Park KS, Roh JS et al. Investigation on the compositionally graded Hf_xAl _yO_z films for TiN based DRAM capacitor. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 371-374. 1546662. (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference). doi: 10.1109/ESSDER.2005.1546662