Investigation on Metal-Oxide Graphene Field-Effect Transistors with clamped geometries

Marco A. Giambra; Christian Benz; Fan Wu; Maximillian Thurmer; Geethu Balachandran; Antonio Benfante; Riccardo Pernice; Himadri Pandey; Muraleetharan Boopathi; Min Ho Jang; Jong Hyun Ahn; Salvatore Stivala; Enrico Calandra; Claudio Arnone; Pasquale Cusumano; Alessandro Busacca; Wolfram H.P. Pernice; Romain Danneau

doi:10.1109/JEDS.2019.2939574

Investigation on Metal-Oxide Graphene Field-Effect Transistors with clamped geometries

Marco A. Giambra, Christian Benz, Fan Wu, Maximillian Thurmer, Geethu Balachandran, Antonio Benfante, Riccardo Pernice, Himadri Pandey, Muraleetharan Boopathi, Min Ho Jang, Jong Hyun Ahn, Salvatore Stivala, Enrico Calandra, Claudio Arnone, Pasquale Cusumano, Alessandro Busacca, Wolfram H.P. Pernice, Romain Danneau

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.

Original language	English
Journal	IEEE Journal of the Electron Devices Society
DOIs	https://doi.org/10.1109/JEDS.2019.2939574
Publication status	Accepted/In press - 2019 Jan 1

All Science Journal Classification (ASJC) codes

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/JEDS.2019.2939574

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Giambra, M. A., Benz, C., Wu, F., Thurmer, M., Balachandran, G., Benfante, A., Pernice, R., Pandey, H., Boopathi, M., Jang, M. H., Ahn, J. H., Stivala, S., Calandra, E., Arnone, C., Cusumano, P., Busacca, A., Pernice, W. H. P., & Danneau, R. (Accepted/In press). Investigation on Metal-Oxide Graphene Field-Effect Transistors with clamped geometries. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/JEDS.2019.2939574

@article{fdd7675b15214440bd65e1d6fcf946c7,

title = "Investigation on Metal-Oxide Graphene Field-Effect Transistors with clamped geometries",

abstract = "In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.",

author = "Giambra, {Marco A.} and Christian Benz and Fan Wu and Maximillian Thurmer and Geethu Balachandran and Antonio Benfante and Riccardo Pernice and Himadri Pandey and Muraleetharan Boopathi and Jang, {Min Ho} and Ahn, {Jong Hyun} and Salvatore Stivala and Enrico Calandra and Claudio Arnone and Pasquale Cusumano and Alessandro Busacca and Pernice, {Wolfram H.P.} and Romain Danneau",

year = "2019",

month = jan,

day = "1",

doi = "10.1109/JEDS.2019.2939574",

language = "English",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Giambra, MA, Benz, C, Wu, F, Thurmer, M, Balachandran, G, Benfante, A, Pernice, R, Pandey, H, Boopathi, M, Jang, MH, Ahn, JH, Stivala, S, Calandra, E, Arnone, C, Cusumano, P, Busacca, A, Pernice, WHP & Danneau, R 2019, 'Investigation on Metal-Oxide Graphene Field-Effect Transistors with clamped geometries', IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/JEDS.2019.2939574

TY - JOUR

T1 - Investigation on Metal-Oxide Graphene Field-Effect Transistors with clamped geometries

AU - Giambra, Marco A.

AU - Benz, Christian

AU - Wu, Fan

AU - Thurmer, Maximillian

AU - Balachandran, Geethu

AU - Benfante, Antonio

AU - Pernice, Riccardo

AU - Pandey, Himadri

AU - Boopathi, Muraleetharan

AU - Jang, Min Ho

AU - Ahn, Jong Hyun

AU - Stivala, Salvatore

AU - Calandra, Enrico

AU - Arnone, Claudio

AU - Cusumano, Pasquale

AU - Busacca, Alessandro

AU - Pernice, Wolfram H.P.

AU - Danneau, Romain

PY - 2019/1/1

Y1 - 2019/1/1

N2 - In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.

AB - In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.

UR - http://www.scopus.com/inward/record.url?scp=85073477562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073477562&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2019.2939574

DO - 10.1109/JEDS.2019.2939574

M3 - Article

SN - 2168-6734

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

Investigation on Metal-Oxide Graphene Field-Effect Transistors with clamped geometries

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