Investigation on Metal-Oxide Graphene Field-Effect Transistors with clamped geometries

Marco A. Giambra, Christian Benz, Fan Wu, Maximillian Thurmer, Geethu Balachandran, Antonio Benfante, Riccardo Pernice, Himadri Pandey, Muraleetharan Boopathi, Min Ho Jang, Jong Hyun Ahn, Salvatore Stivala, Enrico Calandra, Claudio Arnone, Pasquale Cusumano, Alessandro Busacca, Wolfram H.P. Pernice, Romain Danneau

Research output: Contribution to journalArticlepeer-review


In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.

Original languageEnglish
JournalIEEE Journal of the Electron Devices Society
Publication statusAccepted/In press - 2019 Jan 1

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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