Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

Won Jun Park, Hyun Soo Shin, Byung Du Ahn, Gun Hee Kim, Seung Min Lee, Kyung Ho Kim, Hyun Jae Kim

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125 Citations (Scopus)


Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [GaZn (%)]. A field-effect mobility of 1.63 cm2 V s and a drain current on/off ratio of 4.17× 106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.

Original languageEnglish
Article number083508
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [Grant No. R0A-2007-000-10044-0 (2007)].

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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