Investigation of thermal measurement variables in high power GaN-based LEDs

Lianqiao Yang, Jianzheng Hu, Moo Whan Shin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)


In this paper we report on the effects of variables in thermal resistance measurement of high power GaN-based light-emitting diodes (LEDs). The investigated variables include ambient temperature, thermal interface material (TIMs) at different pressure. The combination of transient thermal measurement method and optical measurement was employed for the study. The measured thermal resistance of LED packages was found to increase with the ambient temperature. The temperature dependence of optical efficiency, forward voltage, and thermal properties of packaging materials are thought to be responsible for the increase of thermal resistance with the ambient temperature. The interface effect on the thermal resistance was studied by applying different external pressure on the interface with different TIMs. And the measured thermal resistances were found to reach stabilization at certain pressure level after initial decrease with the external applied pressure.

Original languageEnglish
Title of host publicationAdvances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PublisherTrans Tech Publications Ltd
Number of pages4
EditionPART 1
ISBN (Print)3908451310, 9783908451310
Publication statusPublished - 2007
EventIUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of
Duration: 2006 Sept 102006 Sept 14

Publication series

NameSolid State Phenomena
NumberPART 1
ISSN (Print)1012-0394


OtherIUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country/TerritoryKorea, Republic of

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Condensed Matter Physics


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