Abstract
The effect of post-treatment on the surface modification for Ru and RuOx films was investigated. The surface morphology of Ru film oxidized by N2O plasma was observed to be much smoother than that by rapid thermal oxidation. In particular, the leakage current property of the Ru film oxidized by N2O plasma was significantly improved due to suppression of heterogeneous grain growth and the Ru-O bonds formed. After post-treatment, otherwise, oxygen is fully diffused through the RuOx layer, producing a porous amorphous microstructure. In addition, the barrier properties for the Ru/TiN/poly-Si/Si contact system are better than that for the RuOx/TiN/poly-Si/Si contact system. Therefore, N2 plasma oxidation can be suggested as a post-treatment method and the Ru film can be proposed as a bottom electrode to improve the electrical properties of dielectric film at the dielectric film/Ru bottom electrode interface.
| Original language | English |
|---|---|
| Pages (from-to) | 511-519 |
| Number of pages | 9 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 14 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2003 Aug |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering