Investigation of the mechanism of titanium suicide reaction using ion-beam-assisted deposition

Jaeho Chang; Gi Bum Kim; Dong Soo Yoon; Hong Koo Baik; Do Joon Yoo; Sung Man Lee

doi:10.1063/1.125184

Investigation of the mechanism of titanium suicide reaction using ion-beam-assisted deposition

Jaeho Chang, Gi Bum Kim, Dong Soo Yoon, Hong Koo Baik, Do Joon Yoo, Sung Man Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In order to promote the formation of C54 TiSi₂, the suppression of C49 TiSi₂ formation by ion-beam-assisted deposition of Ti film was investigated. When the Ti film was deposited without ion bombardment, C49 TiSi₂ was formed at 600°C. In contrast, in the case where the Ti film was deposited with concurrent ion bombardment, TiSi formation occurred at the same temperature. The formation of TiSi was attributed to the enhancement of both Si and Ti diffusion below 600°C, due to grain refinement induced by Ar-ion-beam bombardment. By the adoption of ion-beam-assisted deposition to the conventional Ti suicide process, the gate line width dependence of C54 TiSi₂ formation can be eliminated, since this formation is achieved via a direct interfacial reaction between TiSi and Si, and not a conversion of C49 TiSi₂.

Original language	English
Pages (from-to)	2900-2902
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	19
DOIs	https://doi.org/10.1063/1.125184
Publication status	Published - 1999 Nov 8

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.125184

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title = "Investigation of the mechanism of titanium suicide reaction using ion-beam-assisted deposition",

abstract = "In order to promote the formation of C54 TiSi2, the suppression of C49 TiSi2 formation by ion-beam-assisted deposition of Ti film was investigated. When the Ti film was deposited without ion bombardment, C49 TiSi2 was formed at 600°C. In contrast, in the case where the Ti film was deposited with concurrent ion bombardment, TiSi formation occurred at the same temperature. The formation of TiSi was attributed to the enhancement of both Si and Ti diffusion below 600°C, due to grain refinement induced by Ar-ion-beam bombardment. By the adoption of ion-beam-assisted deposition to the conventional Ti suicide process, the gate line width dependence of C54 TiSi2 formation can be eliminated, since this formation is achieved via a direct interfacial reaction between TiSi and Si, and not a conversion of C49 TiSi2.",

author = "Jaeho Chang and Kim, {Gi Bum} and Yoon, {Dong Soo} and Baik, {Hong Koo} and Yoo, {Do Joon} and Lee, {Sung Man}",

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T1 - Investigation of the mechanism of titanium suicide reaction using ion-beam-assisted deposition

AU - Chang, Jaeho

AU - Kim, Gi Bum

AU - Yoon, Dong Soo

AU - Baik, Hong Koo

AU - Yoo, Do Joon

AU - Lee, Sung Man

PY - 1999/11/8

Y1 - 1999/11/8

N2 - In order to promote the formation of C54 TiSi2, the suppression of C49 TiSi2 formation by ion-beam-assisted deposition of Ti film was investigated. When the Ti film was deposited without ion bombardment, C49 TiSi2 was formed at 600°C. In contrast, in the case where the Ti film was deposited with concurrent ion bombardment, TiSi formation occurred at the same temperature. The formation of TiSi was attributed to the enhancement of both Si and Ti diffusion below 600°C, due to grain refinement induced by Ar-ion-beam bombardment. By the adoption of ion-beam-assisted deposition to the conventional Ti suicide process, the gate line width dependence of C54 TiSi2 formation can be eliminated, since this formation is achieved via a direct interfacial reaction between TiSi and Si, and not a conversion of C49 TiSi2.

AB - In order to promote the formation of C54 TiSi2, the suppression of C49 TiSi2 formation by ion-beam-assisted deposition of Ti film was investigated. When the Ti film was deposited without ion bombardment, C49 TiSi2 was formed at 600°C. In contrast, in the case where the Ti film was deposited with concurrent ion bombardment, TiSi formation occurred at the same temperature. The formation of TiSi was attributed to the enhancement of both Si and Ti diffusion below 600°C, due to grain refinement induced by Ar-ion-beam bombardment. By the adoption of ion-beam-assisted deposition to the conventional Ti suicide process, the gate line width dependence of C54 TiSi2 formation can be eliminated, since this formation is achieved via a direct interfacial reaction between TiSi and Si, and not a conversion of C49 TiSi2.

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Investigation of the mechanism of titanium suicide reaction using ion-beam-assisted deposition

Abstract

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