Investigation of the mechanism of titanium suicide reaction using ion-beam-assisted deposition

Jaeho Chang, Gi Bum Kim, Dong Soo Yoon, Hong Koo Baik, Do Joon Yoo, Sung Man Lee

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11 Citations (Scopus)


In order to promote the formation of C54 TiSi2, the suppression of C49 TiSi2 formation by ion-beam-assisted deposition of Ti film was investigated. When the Ti film was deposited without ion bombardment, C49 TiSi2 was formed at 600°C. In contrast, in the case where the Ti film was deposited with concurrent ion bombardment, TiSi formation occurred at the same temperature. The formation of TiSi was attributed to the enhancement of both Si and Ti diffusion below 600°C, due to grain refinement induced by Ar-ion-beam bombardment. By the adoption of ion-beam-assisted deposition to the conventional Ti suicide process, the gate line width dependence of C54 TiSi2 formation can be eliminated, since this formation is achieved via a direct interfacial reaction between TiSi and Si, and not a conversion of C49 TiSi2.

Original languageEnglish
Pages (from-to)2900-2902
Number of pages3
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 1999 Nov 8

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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