Investigation of the interface oxide of Al2O3 / HfO2 and HfO2 / Al2O3 stacks on GaAs (100) surfaces

Young Dae Cho, Dong Chan Suh, Yongshik Lee, Dae Hong Ko, Kwun Bum Chung, Mann Ho Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The physical and the electrical properties of ALD Al2O 3 / HfO2 and HfO2 / Al2O3 stacks on GaAs systems before after heat treatment are investigated. Results reveal that the addition of Al2O3 layers suppresses not only the poly-crystallization of HfO2 even after heat treatment, but also the formation of interfacial oxide. High-resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) analysis results are presented.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
PublisherElectrochemical Society Inc.
Number of pages4
ISBN (Electronic)9781607681410
ISBN (Print)9781566777919
Publication statusPublished - 2010

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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