Investigation of the interface oxide of Al2O3 / HfO2 and HfO2 / Al2O3 stacks on GaAs (100) surfaces

Young Dae Cho; Dong Chan Suh; Yongshik Lee; Dae Hong Ko; Kwun Bum Chung; Mann Ho Cho

doi:10.1149/1.3375616

Investigation of the interface oxide of Al₂O₃ / HfO₂ and HfO₂ / Al₂O₃ stacks on GaAs (100) surfaces

Young Dae Cho, Dong Chan Suh, Yongshik Lee, Dae Hong Ko, Kwun Bum Chung, Mann Ho Cho

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The physical and the electrical properties of ALD Al₂O ₃ / HfO₂ and HfO₂ / Al₂O₃ stacks on GaAs systems before after heat treatment are investigated. Results reveal that the addition of Al₂O₃ layers suppresses not only the poly-crystallization of HfO₂ even after heat treatment, but also the formation of interfacial oxide. High-resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) analysis results are presented.

Original language	English
Title of host publication	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publication	New Materials, Processes, and Equipment
Publisher	Electrochemical Society Inc.
Pages	311-314
Number of pages	4
Edition	1
ISBN (Electronic)	9781607681410
ISBN (Print)	9781566777919
DOIs	https://doi.org/10.1149/1.3375616
Publication status	Published - 2010

Publication series

Name	ECS Transactions
Number	1
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.3375616

Cite this

Cho, Y. D., Suh, D. C., Lee, Y., Ko, D. H., Chung, K. B., & Cho, M. H. (2010). Investigation of the interface oxide of Al₂O₃ / HfO₂ and HfO₂ / Al₂O₃ stacks on GaAs (100) surfaces. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment (1 ed., pp. 311-314). (ECS Transactions; Vol. 28, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3375616

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abstract = "The physical and the electrical properties of ALD Al2O 3 / HfO2 and HfO2 / Al2O3 stacks on GaAs systems before after heat treatment are investigated. Results reveal that the addition of Al2O3 layers suppresses not only the poly-crystallization of HfO2 even after heat treatment, but also the formation of interfacial oxide. High-resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) analysis results are presented.",

author = "Cho, {Young Dae} and Suh, {Dong Chan} and Yongshik Lee and Ko, {Dae Hong} and Chung, {Kwun Bum} and Cho, {Mann Ho}",

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language = "English",

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Cho, YD, Suh, DC, Lee, Y , Ko, DH, Chung, KB & Cho, MH 2010, Investigation of the interface oxide of Al₂O₃ / HfO₂ and HfO₂ / Al₂O₃ stacks on GaAs (100) surfaces. in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 28, Electrochemical Society Inc., pp. 311-314. https://doi.org/10.1149/1.3375616

Investigation of the interface oxide of Al₂O₃ / HfO₂ and HfO₂ / Al₂O₃ stacks on GaAs (100) surfaces. / Cho, Young Dae; Suh, Dong Chan; Lee, Yongshik et al.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1. ed. Electrochemical Society Inc., 2010. p. 311-314 (ECS Transactions; Vol. 28, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - The physical and the electrical properties of ALD Al2O 3 / HfO2 and HfO2 / Al2O3 stacks on GaAs systems before after heat treatment are investigated. Results reveal that the addition of Al2O3 layers suppresses not only the poly-crystallization of HfO2 even after heat treatment, but also the formation of interfacial oxide. High-resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) analysis results are presented.

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Cho YD, Suh DC, Lee Y , Ko DH, Chung KB, Cho MH. Investigation of the interface oxide of Al₂O₃ / HfO₂ and HfO₂ / Al₂O₃ stacks on GaAs (100) surfaces. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 ed. Electrochemical Society Inc. 2010. p. 311-314. (ECS Transactions; 1). doi: 10.1149/1.3375616