Abstract
To reduce signal delay in ultra-large-scale integrated circuits, an intermetal dielectric with low dielectric constant is required. Ordered mesoporous silica film is appropriate for use as an intermetal dielectric due to its low dielectric constant and superior mechanical properties. To reduce the dielectric constant, an ordered mesoporous silica film prepared by a tetraethoxysilane/methyltriethoxysilane silica precursor and Brij-76 block copolymer was surface-modified by hexamethyldisilazane (HMDS) treatment. HMDS treatment substituted {single bond}OH with {single bond}Si(CH3)3 groups on the silica surface. After treatment, ordered mesoporous silica films were calcined at various calcination temperatures, and the calcination temperature to obtain optimal structural, electrical, and mechanical properties was determined to be approximately 300 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 186-190 |
| Number of pages | 5 |
| Journal | Journal of Colloid and Interface Science |
| Volume | 326 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2008 Oct 1 |
Bibliographical note
Funding Information:This work was supported by the IT R&D program of MKE/IITA [2006-S054-01, Development of CMOS-based MEMS processed multifunctional sensor for ubiquitous environment]. This work was researched by the Second Stage of Brain Korea 21 Project in 2007. The experiments at the PLS were supported in part by MOST and POSTECH.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Surfaces, Coatings and Films
- Colloid and Surface Chemistry