Investigation of Ta-RuO2 diffusion barrier for high density memory capacitor applications

Dong Soo Yoon, Hong Koo Baik, Sung Man Lee, Chang Soo Park, Sang In Lee

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14 Citations (Scopus)


The properties of both oxygen indiffusion and oxidation resistance in a Ta+RuO2 layer for high density memory devices were investigated by using Rutherford backscattering spectroscopy, four point probe, x-ray diffraction, x-ray photoelectron spectroscopy, and planar transmission electron microscopy. The Ta+RuO2/Si system sustained up to 800 °C without an increase in resistivity. The Ta+RuO2 diffusion barrier showed a Ta amorphous microstructure and an embedded RuOx nanocrystalline structure in the as-deposited state. The Ta+RuO2 film showed the formation of RuO2 phase by reaction with the indiffused oxygen from atmosphere after annealing in an air ambient. The Ta+RuO2 diffusion barrier showed that Ta is sufficiently bound to oxygen in the as-deposited state, but RuO2 consists of Ru and Ru-O binding state. The Ta-O bonds showed little change compared to the as-deposited state with increasing annealing temperature, whereas Ru-O bonds significantly increased and transformed to conductive oxide, RuO2. Therefore, the Ta layer deposited by RuO2 addition effectively prevented the indiffusion of oxygen up to 800 °C and its oxidation resistance was superior to various barriers reported by others.

Original languageEnglish
Pages (from-to)3059-3064
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 1998 Nov

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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