Investigation of solution-processed amorphous SrInZnO thin film transistors

Doo Hyun Yoon; Si Joon Kim; Woong Hee Jeong; Dong Lim Kim; You Seung Rim; Hyun Jae Kim

doi:10.1016/j.jcrysgro.2011.01.090

Investigation of solution-processed amorphous SrInZnO thin film transistors

Doo Hyun Yoon, Si Joon Kim, Woong Hee Jeong, Dong Lim Kim, You Seung Rim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

In this study, we propose the fabrication of amorphous SrInZnO (SIZO) thin film transistors (TFTs) using a solution process. To analyze the effects of Sr incorporation and annealing temperature on solution-processed amorphous SIZO TFTs, Hall measurements, thermogravimetry-differential thermal analysis, transmittance measurements, and X-ray diffraction were performed. The experimental results showed that the increased addition of Sr to the IZO system resulted in suppression of carrier generation. Additionally, as the annealing temperature was increased from 300 to 500 °C, the TFT showed increased performance. At optimized conditions (20 at%, 500 °C, 2 h) for SIZO TFTs, we achieved a saturation mobility of 0.34 cm²/Vs, an on/off ratio of 4.54×10⁶, a threshold voltage of 3.25 V, and a subthreshold swing of 0.61 V/decade.

Original language	English
Pages (from-to)	171-174
Number of pages	4
Journal	Journal of Crystal Growth
Volume	326
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.01.090
Publication status	Published - 2011 Jul 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) through a National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [No. R0A-2007-000-10044-0(2007) ].

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2011.01.090

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@article{40febcc36db24b05af6de1bc1ddf0da7,

title = "Investigation of solution-processed amorphous SrInZnO thin film transistors",

abstract = "In this study, we propose the fabrication of amorphous SrInZnO (SIZO) thin film transistors (TFTs) using a solution process. To analyze the effects of Sr incorporation and annealing temperature on solution-processed amorphous SIZO TFTs, Hall measurements, thermogravimetry-differential thermal analysis, transmittance measurements, and X-ray diffraction were performed. The experimental results showed that the increased addition of Sr to the IZO system resulted in suppression of carrier generation. Additionally, as the annealing temperature was increased from 300 to 500 °C, the TFT showed increased performance. At optimized conditions (20 at%, 500 °C, 2 h) for SIZO TFTs, we achieved a saturation mobility of 0.34 cm2/Vs, an on/off ratio of 4.54×106, a threshold voltage of 3.25 V, and a subthreshold swing of 0.61 V/decade.",

author = "Yoon, {Doo Hyun} and Kim, {Si Joon} and Jeong, {Woong Hee} and Kim, {Dong Lim} and Rim, {You Seung} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) through a National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [No. R0A-2007-000-10044-0(2007) ].",

year = "2011",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2011.01.090",

language = "English",

volume = "326",

pages = "171--174",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Investigation of solution-processed amorphous SrInZnO thin film transistors

AU - Yoon, Doo Hyun

AU - Kim, Si Joon

AU - Jeong, Woong Hee

AU - Kim, Dong Lim

AU - Rim, You Seung

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) through a National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [No. R0A-2007-000-10044-0(2007) ].

PY - 2011/7/1

Y1 - 2011/7/1

N2 - In this study, we propose the fabrication of amorphous SrInZnO (SIZO) thin film transistors (TFTs) using a solution process. To analyze the effects of Sr incorporation and annealing temperature on solution-processed amorphous SIZO TFTs, Hall measurements, thermogravimetry-differential thermal analysis, transmittance measurements, and X-ray diffraction were performed. The experimental results showed that the increased addition of Sr to the IZO system resulted in suppression of carrier generation. Additionally, as the annealing temperature was increased from 300 to 500 °C, the TFT showed increased performance. At optimized conditions (20 at%, 500 °C, 2 h) for SIZO TFTs, we achieved a saturation mobility of 0.34 cm2/Vs, an on/off ratio of 4.54×106, a threshold voltage of 3.25 V, and a subthreshold swing of 0.61 V/decade.

AB - In this study, we propose the fabrication of amorphous SrInZnO (SIZO) thin film transistors (TFTs) using a solution process. To analyze the effects of Sr incorporation and annealing temperature on solution-processed amorphous SIZO TFTs, Hall measurements, thermogravimetry-differential thermal analysis, transmittance measurements, and X-ray diffraction were performed. The experimental results showed that the increased addition of Sr to the IZO system resulted in suppression of carrier generation. Additionally, as the annealing temperature was increased from 300 to 500 °C, the TFT showed increased performance. At optimized conditions (20 at%, 500 °C, 2 h) for SIZO TFTs, we achieved a saturation mobility of 0.34 cm2/Vs, an on/off ratio of 4.54×106, a threshold voltage of 3.25 V, and a subthreshold swing of 0.61 V/decade.

UR - http://www.scopus.com/inward/record.url?scp=79960185464&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960185464&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2011.01.090

DO - 10.1016/j.jcrysgro.2011.01.090

M3 - Article

AN - SCOPUS:79960185464

SN - 0022-0248

VL - 326

SP - 171

EP - 174

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Investigation of solution-processed amorphous SrInZnO thin film transistors

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Bibliographical note

All Science Journal Classification (ASJC) codes

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