Investigation of optical and compositional properties of thin SiN x:H films with an enhanced growth rate by high frequency PECVD method

Min Jung Lee; Joyti Prakash Kar; Tae Il Lee; Dongwon Lee; Dae Kyu Choi; Joong Hwee Cho; Jae Min Myoung

doi:10.1016/j.vacuum.2011.03.012

Investigation of optical and compositional properties of thin SiN _x:H films with an enhanced growth rate by high frequency PECVD method

Min Jung Lee, Joyti Prakash Kar, Tae Il Lee, Dongwon Lee, Dae Kyu Choi, Joong Hwee Cho, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Hydrogenated thin silicon nitride (SiN_x:H) films were deposited by high frequency plasma enhanced chemical vapor deposition techniques at various NH₃ and SiH₄ gas flow ratios [R = NH ₃/(SiH₄ + NH₃)], where the flow rate of NH ₃ was varied by keeping the constant flow (150 sccm) of SiH ₄. The deposition rate of the films was found to be 7.1, 7.3, 9 and 11 /s for the variation of R as 0.5, 0.67, 0.75 and 0.83, respectively. The films were optically and compositionally characterized by reflectance, photoluminescence, infrared absorption and X-ray photoelectron spectroscopy. The films were amorphous in nature and the refractive indices of the films were varied between 2.46 and 1.90 by changing the gas flow ratio during the deposition. The PL peak energy was increased and the linear band tails become broad with the increase in R. The incorporation of nitrogen takes place with the increase in R.

Original language	English
Pages (from-to)	1032-1036
Number of pages	5
Journal	Vacuum
Volume	85
Issue number	11
DOIs	https://doi.org/10.1016/j.vacuum.2011.03.012
Publication status	Published - 2011 Apr 15

Bibliographical note

Funding Information:
This work was supported by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant ( 2008NPV12J0431202009 ) funded by the Korea government Ministry of Knowledge Economy.

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

Access to Document

10.1016/j.vacuum.2011.03.012

Cite this

@article{9c7ebcc4dea3489992be79c915832243,

title = "Investigation of optical and compositional properties of thin SiN x:H films with an enhanced growth rate by high frequency PECVD method",

abstract = "Hydrogenated thin silicon nitride (SiNx:H) films were deposited by high frequency plasma enhanced chemical vapor deposition techniques at various NH3 and SiH4 gas flow ratios [R = NH 3/(SiH4 + NH3)], where the flow rate of NH 3 was varied by keeping the constant flow (150 sccm) of SiH 4. The deposition rate of the films was found to be 7.1, 7.3, 9 and 11 /s for the variation of R as 0.5, 0.67, 0.75 and 0.83, respectively. The films were optically and compositionally characterized by reflectance, photoluminescence, infrared absorption and X-ray photoelectron spectroscopy. The films were amorphous in nature and the refractive indices of the films were varied between 2.46 and 1.90 by changing the gas flow ratio during the deposition. The PL peak energy was increased and the linear band tails become broad with the increase in R. The incorporation of nitrogen takes place with the increase in R.",

author = "Lee, {Min Jung} and Kar, {Joyti Prakash} and Lee, {Tae Il} and Dongwon Lee and Choi, {Dae Kyu} and Cho, {Joong Hwee} and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant ( 2008NPV12J0431202009 ) funded by the Korea government Ministry of Knowledge Economy.",

year = "2011",

month = apr,

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doi = "10.1016/j.vacuum.2011.03.012",

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T1 - Investigation of optical and compositional properties of thin SiN x:H films with an enhanced growth rate by high frequency PECVD method

AU - Lee, Min Jung

AU - Kar, Joyti Prakash

AU - Lee, Tae Il

AU - Lee, Dongwon

AU - Choi, Dae Kyu

AU - Cho, Joong Hwee

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant ( 2008NPV12J0431202009 ) funded by the Korea government Ministry of Knowledge Economy.

PY - 2011/4/15

Y1 - 2011/4/15

N2 - Hydrogenated thin silicon nitride (SiNx:H) films were deposited by high frequency plasma enhanced chemical vapor deposition techniques at various NH3 and SiH4 gas flow ratios [R = NH 3/(SiH4 + NH3)], where the flow rate of NH 3 was varied by keeping the constant flow (150 sccm) of SiH 4. The deposition rate of the films was found to be 7.1, 7.3, 9 and 11 /s for the variation of R as 0.5, 0.67, 0.75 and 0.83, respectively. The films were optically and compositionally characterized by reflectance, photoluminescence, infrared absorption and X-ray photoelectron spectroscopy. The films were amorphous in nature and the refractive indices of the films were varied between 2.46 and 1.90 by changing the gas flow ratio during the deposition. The PL peak energy was increased and the linear band tails become broad with the increase in R. The incorporation of nitrogen takes place with the increase in R.

AB - Hydrogenated thin silicon nitride (SiNx:H) films were deposited by high frequency plasma enhanced chemical vapor deposition techniques at various NH3 and SiH4 gas flow ratios [R = NH 3/(SiH4 + NH3)], where the flow rate of NH 3 was varied by keeping the constant flow (150 sccm) of SiH 4. The deposition rate of the films was found to be 7.1, 7.3, 9 and 11 /s for the variation of R as 0.5, 0.67, 0.75 and 0.83, respectively. The films were optically and compositionally characterized by reflectance, photoluminescence, infrared absorption and X-ray photoelectron spectroscopy. The films were amorphous in nature and the refractive indices of the films were varied between 2.46 and 1.90 by changing the gas flow ratio during the deposition. The PL peak energy was increased and the linear band tails become broad with the increase in R. The incorporation of nitrogen takes place with the increase in R.

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