Investigation of link formation in a novel planar-type antifuse structure

Jong Tae Baek, Hyung Ho Park, Sang Won Kang, Byung Tae Ahn, Ilyung Joun Yoo

Research output: Contribution to journalArticlepeer-review


A novel antifuse structure with planar-type polysilicon pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiO2/poly-Si/SiO2/Al layers. The poly-Si pad was doped with boron and the thickness of the antifuse dielectric was 9 nm. When a programming voltage is applied, the electrodes are connected by the mass transfer of aluminum through the dielectric and the doped polysilicon pad. The on-state resistance of about 10 Ω, which is the lowest on-state resistance ever reported, is obtained after breakdown with 9.9 V programming voltage. Scanning Auger microscopy analyses show the propagation of a link, as mass transfer of aluminum in the boron doped polysilicon pad. The elliptical link has a maximum diameter of 1.0 μm in the horizontal direction and a minimum diameter of 320 nm in the vertical direction.

Original languageEnglish
Pages (from-to)41-44
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1996 Nov 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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