Investigation of link formation in a novel planar-type antifuse structure

Jong Tae Baek; Hyung Ho Park; Sang Won Kang; Byung Tae Ahn; Ilyung Joun Yoo

doi:10.1016/S0040-6090(96)08812-8

Investigation of link formation in a novel planar-type antifuse structure

Jong Tae Baek, Hyung Ho Park, Sang Won Kang, Byung Tae Ahn, Ilyung Joun Yoo

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A novel antifuse structure with planar-type polysilicon pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiO₂/poly-Si/SiO₂/Al layers. The poly-Si pad was doped with boron and the thickness of the antifuse dielectric was 9 nm. When a programming voltage is applied, the electrodes are connected by the mass transfer of aluminum through the dielectric and the doped polysilicon pad. The on-state resistance of about 10 Ω, which is the lowest on-state resistance ever reported, is obtained after breakdown with 9.9 V programming voltage. Scanning Auger microscopy analyses show the propagation of a link, as mass transfer of aluminum in the boron doped polysilicon pad. The elliptical link has a maximum diameter of 1.0 μm in the horizontal direction and a minimum diameter of 320 nm in the vertical direction.

Original language	English
Pages (from-to)	41-44
Number of pages	4
Journal	Thin Solid Films
Volume	288
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)08812-8
Publication status	Published - 1996 Nov 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(96)08812-8

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title = "Investigation of link formation in a novel planar-type antifuse structure",

abstract = "A novel antifuse structure with planar-type polysilicon pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiO2/poly-Si/SiO2/Al layers. The poly-Si pad was doped with boron and the thickness of the antifuse dielectric was 9 nm. When a programming voltage is applied, the electrodes are connected by the mass transfer of aluminum through the dielectric and the doped polysilicon pad. The on-state resistance of about 10 Ω, which is the lowest on-state resistance ever reported, is obtained after breakdown with 9.9 V programming voltage. Scanning Auger microscopy analyses show the propagation of a link, as mass transfer of aluminum in the boron doped polysilicon pad. The elliptical link has a maximum diameter of 1.0 μm in the horizontal direction and a minimum diameter of 320 nm in the vertical direction.",

author = "Baek, {Jong Tae} and Park, {Hyung Ho} and Kang, {Sang Won} and Ahn, {Byung Tae} and Yoo, {Ilyung Joun}",

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T1 - Investigation of link formation in a novel planar-type antifuse structure

AU - Baek, Jong Tae

AU - Park, Hyung Ho

AU - Kang, Sang Won

AU - Ahn, Byung Tae

AU - Yoo, Ilyung Joun

PY - 1996/11/15

Y1 - 1996/11/15

N2 - A novel antifuse structure with planar-type polysilicon pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiO2/poly-Si/SiO2/Al layers. The poly-Si pad was doped with boron and the thickness of the antifuse dielectric was 9 nm. When a programming voltage is applied, the electrodes are connected by the mass transfer of aluminum through the dielectric and the doped polysilicon pad. The on-state resistance of about 10 Ω, which is the lowest on-state resistance ever reported, is obtained after breakdown with 9.9 V programming voltage. Scanning Auger microscopy analyses show the propagation of a link, as mass transfer of aluminum in the boron doped polysilicon pad. The elliptical link has a maximum diameter of 1.0 μm in the horizontal direction and a minimum diameter of 320 nm in the vertical direction.

AB - A novel antifuse structure with planar-type polysilicon pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiO2/poly-Si/SiO2/Al layers. The poly-Si pad was doped with boron and the thickness of the antifuse dielectric was 9 nm. When a programming voltage is applied, the electrodes are connected by the mass transfer of aluminum through the dielectric and the doped polysilicon pad. The on-state resistance of about 10 Ω, which is the lowest on-state resistance ever reported, is obtained after breakdown with 9.9 V programming voltage. Scanning Auger microscopy analyses show the propagation of a link, as mass transfer of aluminum in the boron doped polysilicon pad. The elliptical link has a maximum diameter of 1.0 μm in the horizontal direction and a minimum diameter of 320 nm in the vertical direction.

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Investigation of link formation in a novel planar-type antifuse structure

Abstract

All Science Journal Classification (ASJC) codes

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