Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

Woong Hee Jeong; Gun Hee Kim; Hyun Soo Shin; Byung Du Ahn; Hyun Jae Kim; Myung Kwan Ryu; Kyung Bae Park; Jong Baek Seon; Sang Yoon Lee

doi:10.1063/1.3340943

Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

Woong Hee Jeong, Gun Hee Kim, Hyun Soo Shin, Byung Du Ahn, Hyun Jae Kim, Myung Kwan Ryu, Kyung Bae Park, Jong Baek Seon, Sang Yoon Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

141 Citations (Scopus)

Abstract

The effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at. % of Hf and Ga/Zn. Because Hf has a high affinity for oxygen in IZO system, the Hf suppresses carrier generation more effectively than does Ga. At 10 at. % of Hf/Zn atomic concentration, the HfInZnO TFTs showed wider on-to-off ratios than those of GaInZnO TFTs due to the low standard-electrode-potential of Hf and sharp subthreshold swings due to low trap density.

Original language	English
Article number	093503
Journal	Applied Physics Letters
Volume	96
Issue number	9
DOIs	https://doi.org/10.1063/1.3340943
Publication status	Published - 2010

Bibliographical note

Funding Information:
This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [Grant No. R0A-2007-000-10044-0(2007)] and also funded by Samsung Advanced Institute of Technology.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3340943

Cite this

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title = "Investigating addition effect of hafnium in InZnO thin film transistors using a solution process",

abstract = "The effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at. % of Hf and Ga/Zn. Because Hf has a high affinity for oxygen in IZO system, the Hf suppresses carrier generation more effectively than does Ga. At 10 at. % of Hf/Zn atomic concentration, the HfInZnO TFTs showed wider on-to-off ratios than those of GaInZnO TFTs due to the low standard-electrode-potential of Hf and sharp subthreshold swings due to low trap density.",

author = "Jeong, {Woong Hee} and Kim, {Gun Hee} and Shin, {Hyun Soo} and {Du Ahn}, Byung and Kim, {Hyun Jae} and Ryu, {Myung Kwan} and Park, {Kyung Bae} and Seon, {Jong Baek} and Lee, {Sang Yoon}",

note = "Funding Information: This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [Grant No. R0A-2007-000-10044-0(2007)] and also funded by Samsung Advanced Institute of Technology.",

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doi = "10.1063/1.3340943",

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volume = "96",

journal = "Applied Physics Letters",

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AU - Jeong, Woong Hee

AU - Kim, Gun Hee

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AU - Du Ahn, Byung

AU - Kim, Hyun Jae

AU - Ryu, Myung Kwan

AU - Park, Kyung Bae

AU - Seon, Jong Baek

AU - Lee, Sang Yoon

N1 - Funding Information: This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [Grant No. R0A-2007-000-10044-0(2007)] and also funded by Samsung Advanced Institute of Technology.

PY - 2010

Y1 - 2010

N2 - The effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at. % of Hf and Ga/Zn. Because Hf has a high affinity for oxygen in IZO system, the Hf suppresses carrier generation more effectively than does Ga. At 10 at. % of Hf/Zn atomic concentration, the HfInZnO TFTs showed wider on-to-off ratios than those of GaInZnO TFTs due to the low standard-electrode-potential of Hf and sharp subthreshold swings due to low trap density.

AB - The effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at. % of Hf and Ga/Zn. Because Hf has a high affinity for oxygen in IZO system, the Hf suppresses carrier generation more effectively than does Ga. At 10 at. % of Hf/Zn atomic concentration, the HfInZnO TFTs showed wider on-to-off ratios than those of GaInZnO TFTs due to the low standard-electrode-potential of Hf and sharp subthreshold swings due to low trap density.

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Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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