Inverse design of the absorbing layer for detection enhancement in near-infrared range

In spite of rapidly increasing demand and various applications of infrared (IR) detectors, their design process for the performance improvement has been mostly dependent on researchers' intuition and knowledge. We present two-dimensional unit structure design of the absorbing layer in IR detectors. A systematic approach is introduced to enhance the absorbing efficiency of incident beam in the near-infrared wavelength range. We derived a layered structure composed of a silicon nitride (Si3N4) layer and an amorphous silicon (a-Si) one in turn by the so called topology optimization in association with the time variant finite element analysis (FEA). It is confirmed that thickness at each layer is in associated with the IR wavelength so that detail dimensions of each layer are inferred. A prototype of the layered structure was fabricated and its performance has been verified through experimental measurement.