Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent Van Der Waals Heterostructure

Jinsu Pak, Ilmin Lee, Kyungjune Cho, Jae Keun Kim, Hyunhak Jeong, Wang Taek Hwang, Geun Ho Ahn, Keehoon Kang, Woo Jong Yu, Ali Javey, Seungjun Chung, Takhee Lee

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS2 have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here, we reveal the intrinsic photoresponsive characteristics of monolayer MoS2, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS2 phototransistors employing a Van Der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron-hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS2 and lays the foundation for two-dimensional materials-based transparent phototransistors.

Original languageEnglish
Pages (from-to)9638-9646
Number of pages9
JournalACS Nano
Issue number8
Publication statusPublished - 2019 Aug 27

Bibliographical note

Publisher Copyright:
Copyright © 2019 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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