Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs

D. Q. Kelly; S. Lee; P. Kalra; R. Harris; J. Oh; P. Kirsch; S. K. Banerjee; P. Majhi; H. Tseng; R. Jammy

doi:10.1016/j.mee.2007.04.133

Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs

D. Q. Kelly, S. Lee, P. Kalra, R. Harris, J. Oh, P. Kirsch, S. K. Banerjee, P. Majhi, H. Tseng, R. Jammy

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The influence of substrate heterostructure (Si/ SiGe/ Si) on performance of MOSFETs with high-k/metal gate stacks has been studied. In particular, the effects of the channel thickness on the performance and short channel properties are evaluated. It is found that these heterostructures, when designed optimally, can not only exhibit high mobility but also excellent control of short channel effects down to 70 nm gate length.

Original language	English
Pages (from-to)	2054-2057
Number of pages	4
Journal	Microelectronic Engineering
Volume	84
Issue number	9-10
DOIs	https://doi.org/10.1016/j.mee.2007.04.133
Publication status	Published - 2007 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2007.04.133

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Kelly, D. Q., Lee, S., Kalra, P., Harris, R., Oh, J., Kirsch, P., Banerjee, S. K., Majhi, P., Tseng, H., & Jammy, R. (2007). Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs. Microelectronic Engineering, 84(9-10), 2054-2057. https://doi.org/10.1016/j.mee.2007.04.133

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Kelly, DQ, Lee, S, Kalra, P, Harris, R, Oh, J, Kirsch, P, Banerjee, SK, Majhi, P, Tseng, H & Jammy, R 2007, 'Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs', Microelectronic Engineering, vol. 84, no. 9-10, pp. 2054-2057. https://doi.org/10.1016/j.mee.2007.04.133

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AU - Kelly, D. Q.

AU - Lee, S.

AU - Kalra, P.

AU - Harris, R.

AU - Oh, J.

AU - Kirsch, P.

AU - Banerjee, S. K.

AU - Majhi, P.

AU - Tseng, H.

AU - Jammy, R.

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Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs

Abstract

All Science Journal Classification (ASJC) codes

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