Interference effects in reflectance line shapes from ZnSe/GaAs epilayers

J. H. Song, E. D. Sim, S. H. Lee, S. K. Chang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The reflectance spectroscopy is performed at 77 K on ZnSe epilayers of different thicknesses grown on GaAs substrates. The exciton line shapes of the reflectance spectra change dramatically with the epilayer thickness. This observation suggests that the interference effects between the reflected waves from the surface and from the interface play an important role on the exciton line shape of the reflectance spectra. To analyze the change in the exciton line shapes quantitatively, the reflectance spectra were calculated using a simple oscillator model for a dielectric function and considering a multiple reflection. Calculated line shapes of the reflectance spectra show good agreement with the observations.

Original languageEnglish
Pages (from-to)125-128
Number of pages4
JournalSolid State Communications
Issue number3
Publication statusPublished - 1998

Bibliographical note

Funding Information:
Acknowledgements-This work was supportedin part by the KOSEF throughS PRC, 1997a nd in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1997,P roject No. 2424.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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