Interference effects in reflectance line shapes from ZnSe/GaAs epilayers

J. H. Song; E. D. Sim; S. H. Lee; S. K. Chang

doi:10.1016/S0038-1098(98)00177-X

Interference effects in reflectance line shapes from ZnSe/GaAs epilayers

J. H. Song, E. D. Sim, S. H. Lee, S. K. Chang

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The reflectance spectroscopy is performed at 77 K on ZnSe epilayers of different thicknesses grown on GaAs substrates. The exciton line shapes of the reflectance spectra change dramatically with the epilayer thickness. This observation suggests that the interference effects between the reflected waves from the surface and from the interface play an important role on the exciton line shape of the reflectance spectra. To analyze the change in the exciton line shapes quantitatively, the reflectance spectra were calculated using a simple oscillator model for a dielectric function and considering a multiple reflection. Calculated line shapes of the reflectance spectra show good agreement with the observations.

Original language	English
Pages (from-to)	125-128
Number of pages	4
Journal	Solid State Communications
Volume	107
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1098(98)00177-X
Publication status	Published - 1998

Bibliographical note

Funding Information:
Acknowledgements-This work was supportedin part by the KOSEF throughS PRC, 1997a nd in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1997,P roject No. 2424.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(98)00177-X

Cite this

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title = "Interference effects in reflectance line shapes from ZnSe/GaAs epilayers",

abstract = "The reflectance spectroscopy is performed at 77 K on ZnSe epilayers of different thicknesses grown on GaAs substrates. The exciton line shapes of the reflectance spectra change dramatically with the epilayer thickness. This observation suggests that the interference effects between the reflected waves from the surface and from the interface play an important role on the exciton line shape of the reflectance spectra. To analyze the change in the exciton line shapes quantitatively, the reflectance spectra were calculated using a simple oscillator model for a dielectric function and considering a multiple reflection. Calculated line shapes of the reflectance spectra show good agreement with the observations.",

author = "Song, {J. H.} and Sim, {E. D.} and Lee, {S. H.} and Chang, {S. K.}",

note = "Funding Information: Acknowledgements-This work was supportedin part by the KOSEF throughS PRC, 1997a nd in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1997,P roject No. 2424.",

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doi = "10.1016/S0038-1098(98)00177-X",

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T1 - Interference effects in reflectance line shapes from ZnSe/GaAs epilayers

AU - Song, J. H.

AU - Sim, E. D.

AU - Lee, S. H.

AU - Chang, S. K.

N1 - Funding Information: Acknowledgements-This work was supportedin part by the KOSEF throughS PRC, 1997a nd in part by the Basic Science Research Institute Program, Ministry of Education of Korea, 1997,P roject No. 2424.

PY - 1998

Y1 - 1998

N2 - The reflectance spectroscopy is performed at 77 K on ZnSe epilayers of different thicknesses grown on GaAs substrates. The exciton line shapes of the reflectance spectra change dramatically with the epilayer thickness. This observation suggests that the interference effects between the reflected waves from the surface and from the interface play an important role on the exciton line shape of the reflectance spectra. To analyze the change in the exciton line shapes quantitatively, the reflectance spectra were calculated using a simple oscillator model for a dielectric function and considering a multiple reflection. Calculated line shapes of the reflectance spectra show good agreement with the observations.

AB - The reflectance spectroscopy is performed at 77 K on ZnSe epilayers of different thicknesses grown on GaAs substrates. The exciton line shapes of the reflectance spectra change dramatically with the epilayer thickness. This observation suggests that the interference effects between the reflected waves from the surface and from the interface play an important role on the exciton line shape of the reflectance spectra. To analyze the change in the exciton line shapes quantitatively, the reflectance spectra were calculated using a simple oscillator model for a dielectric function and considering a multiple reflection. Calculated line shapes of the reflectance spectra show good agreement with the observations.

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JO - Solid State Communications

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ER -

Interference effects in reflectance line shapes from ZnSe/GaAs epilayers

Abstract

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All Science Journal Classification (ASJC) codes

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