Interfacial reactions in annealed W/WNx/poly Si1-xGex

S. K. Kang; J. J. Kim; B. C. Min; D. H. Ko; H. B. Kang; C. W. Yang; T. H. Ahn; T. W. Lee; Y. H. Lee

Interfacial reactions in annealed W/WN_x/poly Si_1-xGe_x

S. K. Kang, J. J. Kim, B. C. Min, D. H. Ko, H. B. Kang, C. W. Yang, T. H. Ahn, T. W. Lee, Y. H. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the interracial reactions in W/WN_x/poly Si_1-xGe_x by using X-ray photoelectron spectroscopy, Auger electron spectroscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectrometry. After annealing treatment, the N composition in the WN_x films decreased to about 5 %, and an interracial layer was formed between the WN_x and the poly Si capping layer due to reactions between the WN_x and the poly Si capping. The interracial layer was found to be composed of W, Si, Ge, and N by analyzing the Si and the Ge binding states and by using EDX.

Original language	English
Pages (from-to)	184-187
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	40
Issue number	1
Publication status	Published - 2002 Jan

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Interfacial reactions in annealed W/WNx/poly Si1-xGex",

abstract = "We investigated the interracial reactions in W/WNx/poly Si1-xGex by using X-ray photoelectron spectroscopy, Auger electron spectroscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectrometry. After annealing treatment, the N composition in the WNx films decreased to about 5 %, and an interracial layer was formed between the WNx and the poly Si capping layer due to reactions between the WNx and the poly Si capping. The interracial layer was found to be composed of W, Si, Ge, and N by analyzing the Si and the Ge binding states and by using EDX.",

author = "Kang, {S. K.} and Kim, {J. J.} and Min, {B. C.} and Ko, {D. H.} and Kang, {H. B.} and Yang, {C. W.} and Ahn, {T. H.} and Lee, {T. W.} and Lee, {Y. H.}",

year = "2002",

month = jan,

language = "English",

volume = "40",

pages = "184--187",

journal = "Journal of the Korean Physical Society",

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T1 - Interfacial reactions in annealed W/WNx/poly Si1-xGex

AU - Kang, S. K.

AU - Kim, J. J.

AU - Min, B. C.

AU - Ko, D. H.

AU - Kang, H. B.

AU - Yang, C. W.

AU - Ahn, T. H.

AU - Lee, T. W.

AU - Lee, Y. H.

PY - 2002/1

Y1 - 2002/1

N2 - We investigated the interracial reactions in W/WNx/poly Si1-xGex by using X-ray photoelectron spectroscopy, Auger electron spectroscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectrometry. After annealing treatment, the N composition in the WNx films decreased to about 5 %, and an interracial layer was formed between the WNx and the poly Si capping layer due to reactions between the WNx and the poly Si capping. The interracial layer was found to be composed of W, Si, Ge, and N by analyzing the Si and the Ge binding states and by using EDX.

AB - We investigated the interracial reactions in W/WNx/poly Si1-xGex by using X-ray photoelectron spectroscopy, Auger electron spectroscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectrometry. After annealing treatment, the N composition in the WNx films decreased to about 5 %, and an interracial layer was formed between the WNx and the poly Si capping layer due to reactions between the WNx and the poly Si capping. The interracial layer was found to be composed of W, Si, Ge, and N by analyzing the Si and the Ge binding states and by using EDX.

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AN - SCOPUS:0036002438

SN - 0374-4884

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

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Interfacial reactions in annealed W/WN_x/poly Si_1-xGe_x

Abstract

All Science Journal Classification (ASJC) codes

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