Interfacial reactions between WN x and poly Si 1-xGe x films

Sung Kwan Kang; Byoung Gi Min; Jae Jin Kim; Dae Hong Ko; Han Byul Kang; Cheol Woong Yang; Mann Ho Cho

doi:10.1063/1.1622779

Interfacial reactions between WN _x and poly Si _1-xGe _x films

Sung Kwan Kang, Byoung Gi Min, Jae Jin Kim, Dae Hong Ko, Han Byul Kang, Cheol Woong Yang, Mann Ho Cho

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Interfacial reactions between WN _x/poly Si films with the annealing conditions were studied. High resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) were used. It was found that after short period of annealing the island-type precipitation was observed. The results also show that Si-N layer become thinner and island-type precipitation become a continuous layer when the annealing time was extended.

Original language	English
Pages (from-to)	7071-7075
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.1622779
Publication status	Published - 2003 Dec 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1622779

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title = "Interfacial reactions between WN x and poly Si 1-xGe x films",

abstract = "Interfacial reactions between WN x/poly Si films with the annealing conditions were studied. High resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) were used. It was found that after short period of annealing the island-type precipitation was observed. The results also show that Si-N layer become thinner and island-type precipitation become a continuous layer when the annealing time was extended.",

author = "Kang, {Sung Kwan} and Min, {Byoung Gi} and Kim, {Jae Jin} and Ko, {Dae Hong} and Kang, {Han Byul} and Yang, {Cheol Woong} and Cho, {Mann Ho}",

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T1 - Interfacial reactions between WN x and poly Si 1-xGe x films

AU - Kang, Sung Kwan

AU - Min, Byoung Gi

AU - Kim, Jae Jin

AU - Ko, Dae Hong

AU - Kang, Han Byul

AU - Yang, Cheol Woong

AU - Cho, Mann Ho

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Interfacial reactions between WN x/poly Si films with the annealing conditions were studied. High resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) were used. It was found that after short period of annealing the island-type precipitation was observed. The results also show that Si-N layer become thinner and island-type precipitation become a continuous layer when the annealing time was extended.

AB - Interfacial reactions between WN x/poly Si films with the annealing conditions were studied. High resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) were used. It was found that after short period of annealing the island-type precipitation was observed. The results also show that Si-N layer become thinner and island-type precipitation become a continuous layer when the annealing time was extended.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Interfacial reactions between WN _x and poly Si _1-xGe _x films

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