Interfacial reactions between HfO 2 films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH 3 vapor

Y. S. Kang; C. Y. Kim; M. H. Cho; C. H. An; H. Kim; J. H. Seo; C. S. Kim; T. G. Lee; D. H. Ko

doi:10.1149/2.008204esl

Interfacial reactions between HfO ₂ films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH ₃ vapor

Y. S. Kang, C. Y. Kim, M. H. Cho, C. H. An, H. Kim, J. H. Seo, C. S. Kim, T. G. Lee, D. H. Ko

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7 Citations (Scopus)

Abstract

The effects of the postnitridation annealing treatment of atomic-layer-deposited HfO ₂InP (001) were investigated as a function of annealing temperature in an NH ₃ ambient. The levels of interfacial oxides of In(PO ₃) ₃ and InPO ₄ were gradually increased through re-oxidation process by the diffusion of oxygen impurities with increasing temperature. Especially, well-ordered hexagonal InN structure with (101) single direction was formed at HfO ₂InP interface due to chemical reactions between In ₂O ₃ and the NH ₃ vapor after a rapid thermal annealing at 600C. The diffusion of interfacial In and P oxides into HfO ₂ film was found to be suppressed by presence of thick InN layer.

Original language	English
Pages (from-to)	G9-G11
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	4
DOIs	https://doi.org/10.1149/2.008204esl
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Interfacial reactions between HfO 2 films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH 3 vapor",

abstract = "The effects of the postnitridation annealing treatment of atomic-layer-deposited HfO 2InP (001) were investigated as a function of annealing temperature in an NH 3 ambient. The levels of interfacial oxides of In(PO 3) 3 and InPO 4 were gradually increased through re-oxidation process by the diffusion of oxygen impurities with increasing temperature. Especially, well-ordered hexagonal InN structure with (101) single direction was formed at HfO 2InP interface due to chemical reactions between In 2O 3 and the NH 3 vapor after a rapid thermal annealing at 600C. The diffusion of interfacial In and P oxides into HfO 2 film was found to be suppressed by presence of thick InN layer.",

author = "Kang, {Y. S.} and Kim, {C. Y.} and Cho, {M. H.} and An, {C. H.} and H. Kim and Seo, {J. H.} and Kim, {C. S.} and Lee, {T. G.} and Ko, {D. H.}",

year = "2012",

doi = "10.1149/2.008204esl",

language = "English",

volume = "15",

pages = "G9--G11",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - Interfacial reactions between HfO 2 films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH 3 vapor

AU - Kang, Y. S.

AU - Kim, C. Y.

AU - Cho, M. H.

AU - An, C. H.

AU - Kim, H.

AU - Seo, J. H.

AU - Kim, C. S.

AU - Lee, T. G.

AU - Ko, D. H.

PY - 2012

Y1 - 2012

N2 - The effects of the postnitridation annealing treatment of atomic-layer-deposited HfO 2InP (001) were investigated as a function of annealing temperature in an NH 3 ambient. The levels of interfacial oxides of In(PO 3) 3 and InPO 4 were gradually increased through re-oxidation process by the diffusion of oxygen impurities with increasing temperature. Especially, well-ordered hexagonal InN structure with (101) single direction was formed at HfO 2InP interface due to chemical reactions between In 2O 3 and the NH 3 vapor after a rapid thermal annealing at 600C. The diffusion of interfacial In and P oxides into HfO 2 film was found to be suppressed by presence of thick InN layer.

AB - The effects of the postnitridation annealing treatment of atomic-layer-deposited HfO 2InP (001) were investigated as a function of annealing temperature in an NH 3 ambient. The levels of interfacial oxides of In(PO 3) 3 and InPO 4 were gradually increased through re-oxidation process by the diffusion of oxygen impurities with increasing temperature. Especially, well-ordered hexagonal InN structure with (101) single direction was formed at HfO 2InP interface due to chemical reactions between In 2O 3 and the NH 3 vapor after a rapid thermal annealing at 600C. The diffusion of interfacial In and P oxides into HfO 2 film was found to be suppressed by presence of thick InN layer.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

Interfacial reactions between HfO ₂ films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH ₃ vapor

Abstract

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