The effects of the postnitridation annealing treatment of atomic-layer-deposited HfO 2InP (001) were investigated as a function of annealing temperature in an NH 3 ambient. The levels of interfacial oxides of In(PO 3) 3 and InPO 4 were gradually increased through re-oxidation process by the diffusion of oxygen impurities with increasing temperature. Especially, well-ordered hexagonal InN structure with (101) single direction was formed at HfO 2InP interface due to chemical reactions between In 2O 3 and the NH 3 vapor after a rapid thermal annealing at 600C. The diffusion of interfacial In and P oxides into HfO 2 film was found to be suppressed by presence of thick InN layer.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2012|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering