Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

C. Y. Kim; S. W. Cho; M. H. Cho; K. B. Chung; C. H. An; H. Kim; H. J. Lee; D. H. Ko

doi:10.1063/1.2996261

Interfacial reaction of atomic-layer-deposited HfO₂ film as a function of the surface state of an n-GaAs (100) substrate

C. Y. Kim, S. W. Cho, M. H. Cho, K. B. Chung, C. H. An, H. Kim, H. J. Lee, D. H. Ko

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The characteristics of interfacial reactions and the valence band offset of HfO₂ films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO₂ film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600 °C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.

Original language	English
Article number	192902
Journal	Applied Physics Letters
Volume	93
Issue number	19
DOIs	https://doi.org/10.1063/1.2996261
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work is partially supported by the “IT R&D program of MKE/IITA (2008-F-023-01, next generation future device fabricated by using nano junction)” and by the “System IC 2010 project of the Korea Ministry of Science and Technology and Ministry of Commerce, Industry and Energy.”

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2996261

Cite this

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title = "Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate",

abstract = "The characteristics of interfacial reactions and the valence band offset of HfO2 films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO2 film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600 °C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.",

author = "Kim, {C. Y.} and Cho, {S. W.} and Cho, {M. H.} and Chung, {K. B.} and An, {C. H.} and H. Kim and Lee, {H. J.} and Ko, {D. H.}",

note = "Funding Information: This work is partially supported by the “IT R&D program of MKE/IITA (2008-F-023-01, next generation future device fabricated by using nano junction)” and by the “System IC 2010 project of the Korea Ministry of Science and Technology and Ministry of Commerce, Industry and Energy.”",

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AU - Kim, C. Y.

AU - Cho, S. W.

AU - Cho, M. H.

AU - Chung, K. B.

AU - An, C. H.

AU - Kim, H.

AU - Lee, H. J.

AU - Ko, D. H.

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PY - 2008

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N2 - The characteristics of interfacial reactions and the valence band offset of HfO2 films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO2 film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600 °C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.

AB - The characteristics of interfacial reactions and the valence band offset of HfO2 films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO2 film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600 °C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.

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