Interfacial reaction in poly Si1-x Gex/ZrO2 with Ge content in poly Si1-xGex films

S. K. Kang, B. G. Min, J. H. Yoo, S. W. Nam, D. H. Ko, H. B. Kang, C. W. Yang, M. H. Cho

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4 Citations (Scopus)


The interracial reaction between poly Si1-xGex (x = 0, 0.2, 0.4) and ZrO2 films after annealing was investigated to use ZrO2 films as an alternative gate dielectric. In the poly Si/ZrO2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si1-xGex (x = 0.2, 0.4)/ZrO2, silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed only in the poly Si0.6Ge0.4/ZrO2 system.

Original languageEnglish
Pages (from-to)G113-G115
JournalElectrochemical and Solid-State Letters
Issue number12
Publication statusPublished - 2002 Dec

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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