Interfacial reaction in poly Si1-x Gex/ZrO2 with Ge content in poly Si1-xGex films

S. K. Kang; B. G. Min; J. H. Yoo; S. W. Nam; D. H. Ko; H. B. Kang; C. W. Yang; M. H. Cho

doi:10.1149/1.1516907

Interfacial reaction in poly Si_1-x Ge_x/ZrO₂ with Ge content in poly Si_1-xGe_x films

S. K. Kang, B. G. Min, J. H. Yoo, S. W. Nam, D. H. Ko, H. B. Kang, C. W. Yang, M. H. Cho

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The interracial reaction between poly Si_1-xGe_x (x = 0, 0.2, 0.4) and ZrO₂ films after annealing was investigated to use ZrO₂ films as an alternative gate dielectric. In the poly Si/ZrO₂ structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si_1-xGe_x (x = 0.2, 0.4)/ZrO₂, silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed only in the poly Si_0.6Ge_0.4/ZrO₂ system.

Original language	English
Pages (from-to)	G113-G115
Journal	Electrochemical and Solid-State Letters
Volume	5
Issue number	12
DOIs	https://doi.org/10.1149/1.1516907
Publication status	Published - 2002 Dec

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.1516907

Cite this

@article{3b68e359f06b4f618193eab3b97d9d49,

title = "Interfacial reaction in poly Si1-x Gex/ZrO2 with Ge content in poly Si1-xGex films",

abstract = "The interracial reaction between poly Si1-xGex (x = 0, 0.2, 0.4) and ZrO2 films after annealing was investigated to use ZrO2 films as an alternative gate dielectric. In the poly Si/ZrO2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si1-xGex (x = 0.2, 0.4)/ZrO2, silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed only in the poly Si0.6Ge0.4/ZrO2 system.",

author = "Kang, {S. K.} and Min, {B. G.} and Yoo, {J. H.} and Nam, {S. W.} and Ko, {D. H.} and Kang, {H. B.} and Yang, {C. W.} and Cho, {M. H.}",

year = "2002",

month = dec,

doi = "10.1149/1.1516907",

language = "English",

volume = "5",

pages = "G113--G115",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "12",

}

TY - JOUR

T1 - Interfacial reaction in poly Si1-x Gex/ZrO2 with Ge content in poly Si1-xGex films

AU - Kang, S. K.

AU - Min, B. G.

AU - Yoo, J. H.

AU - Nam, S. W.

AU - Ko, D. H.

AU - Kang, H. B.

AU - Yang, C. W.

AU - Cho, M. H.

PY - 2002/12

Y1 - 2002/12

N2 - The interracial reaction between poly Si1-xGex (x = 0, 0.2, 0.4) and ZrO2 films after annealing was investigated to use ZrO2 films as an alternative gate dielectric. In the poly Si/ZrO2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si1-xGex (x = 0.2, 0.4)/ZrO2, silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed only in the poly Si0.6Ge0.4/ZrO2 system.

AB - The interracial reaction between poly Si1-xGex (x = 0, 0.2, 0.4) and ZrO2 films after annealing was investigated to use ZrO2 films as an alternative gate dielectric. In the poly Si/ZrO2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si1-xGex (x = 0.2, 0.4)/ZrO2, silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed only in the poly Si0.6Ge0.4/ZrO2 system.

UR - http://www.scopus.com/inward/record.url?scp=0036900077&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036900077&partnerID=8YFLogxK

U2 - 10.1149/1.1516907

DO - 10.1149/1.1516907

M3 - Article

AN - SCOPUS:0036900077

SN - 1099-0062

VL - 5

SP - G113-G115

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

ER -

Interfacial reaction in poly Si_1-x Ge_x/ZrO₂ with Ge content in poly Si_1-xGe_x films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this