Interfacial reaction depending on the stack structure of Al 2O3 and HfO2 during film growth and postannealing

M. H. Cho; K. B. Chung; H. S. Chang; D. W. Moon; S. A. Park; Y. K. Kim; K. Jeong; C. N. Whang; D. W. Lee; D. H. Ko; S. J. Doh; J. H. Lee; N. I. Lee

doi:10.1063/1.1807968

Interfacial reaction depending on the stack structure of Al ₂O₃ and HfO₂ during film growth and postannealing

M. H. Cho, K. B. Chung, H. S. Chang, D. W. Moon, S. A. Park, Y. K. Kim, K. Jeong, C. N. Whang, D. W. Lee, D. H. Ko, S. J. Doh, J. H. Lee, N. I. Lee

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Interfacial reactions as a function of the stack structure of Al ₂O₃ and HfO₂ grown on Si by atomic-layer deposition were examined by various physical and electrical measurements. In the case of an Al₂O₃ film with a buffer layer of HfO ₂, reactions between the Al₂O₃ and Si layers were suppressed, while a HfO₂ film with an Al₂O ₃ buffer layer on the Si readily interacted with Si, forming a Hf-Al-Si-O compound. The thickness of the interfacial layer increased dramatically after an annealing treatment in which a buffer layer of Al ₂O₃ was used, while no change in thickness was observed in the film in which a HfO₂ buffer layer was used. Moreover, the stoichiometric change caused by a different reaction process altered the chemical state of the films, which affected charge trapping and the interfacial trap density.

Original language	English
Pages (from-to)	4115-4117
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	18
DOIs	https://doi.org/10.1063/1.1807968
Publication status	Published - 2004 Nov 1

Bibliographical note

Funding Information:
This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 Century Frontier Programs.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1807968

Cite this

@article{66fc0f02bb9d475f9e2d21db4dd28e93,

title = "Interfacial reaction depending on the stack structure of Al 2O3 and HfO2 during film growth and postannealing",

abstract = "Interfacial reactions as a function of the stack structure of Al 2O3 and HfO2 grown on Si by atomic-layer deposition were examined by various physical and electrical measurements. In the case of an Al2O3 film with a buffer layer of HfO 2, reactions between the Al2O3 and Si layers were suppressed, while a HfO2 film with an Al2O 3 buffer layer on the Si readily interacted with Si, forming a Hf-Al-Si-O compound. The thickness of the interfacial layer increased dramatically after an annealing treatment in which a buffer layer of Al 2O3 was used, while no change in thickness was observed in the film in which a HfO2 buffer layer was used. Moreover, the stoichiometric change caused by a different reaction process altered the chemical state of the films, which affected charge trapping and the interfacial trap density.",

author = "Cho, {M. H.} and Chung, {K. B.} and Chang, {H. S.} and Moon, {D. W.} and Park, {S. A.} and Kim, {Y. K.} and K. Jeong and Whang, {C. N.} and Lee, {D. W.} and Ko, {D. H.} and Doh, {S. J.} and Lee, {J. H.} and Lee, {N. I.}",

note = "Funding Information: This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 Century Frontier Programs.",

year = "2004",

month = nov,

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doi = "10.1063/1.1807968",

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T1 - Interfacial reaction depending on the stack structure of Al 2O3 and HfO2 during film growth and postannealing

AU - Cho, M. H.

AU - Chung, K. B.

AU - Chang, H. S.

AU - Moon, D. W.

AU - Park, S. A.

AU - Kim, Y. K.

AU - Jeong, K.

AU - Whang, C. N.

AU - Lee, D. W.

AU - Ko, D. H.

AU - Doh, S. J.

AU - Lee, J. H.

AU - Lee, N. I.

N1 - Funding Information: This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 Century Frontier Programs.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - Interfacial reactions as a function of the stack structure of Al 2O3 and HfO2 grown on Si by atomic-layer deposition were examined by various physical and electrical measurements. In the case of an Al2O3 film with a buffer layer of HfO 2, reactions between the Al2O3 and Si layers were suppressed, while a HfO2 film with an Al2O 3 buffer layer on the Si readily interacted with Si, forming a Hf-Al-Si-O compound. The thickness of the interfacial layer increased dramatically after an annealing treatment in which a buffer layer of Al 2O3 was used, while no change in thickness was observed in the film in which a HfO2 buffer layer was used. Moreover, the stoichiometric change caused by a different reaction process altered the chemical state of the films, which affected charge trapping and the interfacial trap density.

AB - Interfacial reactions as a function of the stack structure of Al 2O3 and HfO2 grown on Si by atomic-layer deposition were examined by various physical and electrical measurements. In the case of an Al2O3 film with a buffer layer of HfO 2, reactions between the Al2O3 and Si layers were suppressed, while a HfO2 film with an Al2O 3 buffer layer on the Si readily interacted with Si, forming a Hf-Al-Si-O compound. The thickness of the interfacial layer increased dramatically after an annealing treatment in which a buffer layer of Al 2O3 was used, while no change in thickness was observed in the film in which a HfO2 buffer layer was used. Moreover, the stoichiometric change caused by a different reaction process altered the chemical state of the films, which affected charge trapping and the interfacial trap density.

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