Interfacial characteristics of HfO 2 grown on nitrided Ge (100) substrates by atomic-layer deposition

Hyoungsub Kim; Paul C. McIntyre; Chi On Chui; Krishna C. Saraswat; Mann Ho Cho

doi:10.1063/1.1797564

Interfacial characteristics of HfO ₂ grown on nitrided Ge (100) substrates by atomic-layer deposition

Hyoungsub Kim, Paul C. McIntyre, Chi On Chui, Krishna C. Saraswat, Mann Ho Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

138 Citations (Scopus)

Abstract

The investigation of the microstructural and electrical properties of Ge-based metal-oxide-semiconductor capacitors containing high-k gate dielectric layers, with and and without the presence of a GeO _xN _y interface layer, was discussed. The effect of nitride layer nitride layer on thermal stability of the metal oxide/Ge structures was probed by using medium energy ion energy spectroscopy (MEIS). It was shown that atomic-layer deposited HfO ₂ on a chemical oxide-terminated Ge (100) surface exhibited poor capacitance-voltage behavior. The direct substrate surface nitridation at 600 °C in NH ₃ ambient before HfO ₂ deposition improved the carrier trapping characteristics.

Original language	English
Pages (from-to)	2902-2904
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	14
DOIs	https://doi.org/10.1063/1.1797564
Publication status	Published - 2004 Oct 4

Bibliographical note

Funding Information:
This research was supported in part by the NSF/SRC Center for Environmentally Benign Semiconductor Manufacturing, Award No. Q423740, by an IBM Faculty Award, by a Mayfield Stanford Graduate Fellowship, and by the Intel Foundation Ph.D. Fellowship.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1797564

Cite this

@article{553488567e884735a53332e93715e6bc,

title = "Interfacial characteristics of HfO 2 grown on nitrided Ge (100) substrates by atomic-layer deposition",

abstract = "The investigation of the microstructural and electrical properties of Ge-based metal-oxide-semiconductor capacitors containing high-k gate dielectric layers, with and and without the presence of a GeO xN y interface layer, was discussed. The effect of nitride layer nitride layer on thermal stability of the metal oxide/Ge structures was probed by using medium energy ion energy spectroscopy (MEIS). It was shown that atomic-layer deposited HfO 2 on a chemical oxide-terminated Ge (100) surface exhibited poor capacitance-voltage behavior. The direct substrate surface nitridation at 600 °C in NH 3 ambient before HfO 2 deposition improved the carrier trapping characteristics.",

author = "Hyoungsub Kim and McIntyre, {Paul C.} and Chui, {Chi On} and Saraswat, {Krishna C.} and Cho, {Mann Ho}",

note = "Funding Information: This research was supported in part by the NSF/SRC Center for Environmentally Benign Semiconductor Manufacturing, Award No. Q423740, by an IBM Faculty Award, by a Mayfield Stanford Graduate Fellowship, and by the Intel Foundation Ph.D. Fellowship.",

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AU - Kim, Hyoungsub

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AU - Saraswat, Krishna C.

AU - Cho, Mann Ho

N1 - Funding Information: This research was supported in part by the NSF/SRC Center for Environmentally Benign Semiconductor Manufacturing, Award No. Q423740, by an IBM Faculty Award, by a Mayfield Stanford Graduate Fellowship, and by the Intel Foundation Ph.D. Fellowship.

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AB - The investigation of the microstructural and electrical properties of Ge-based metal-oxide-semiconductor capacitors containing high-k gate dielectric layers, with and and without the presence of a GeO xN y interface layer, was discussed. The effect of nitride layer nitride layer on thermal stability of the metal oxide/Ge structures was probed by using medium energy ion energy spectroscopy (MEIS). It was shown that atomic-layer deposited HfO 2 on a chemical oxide-terminated Ge (100) surface exhibited poor capacitance-voltage behavior. The direct substrate surface nitridation at 600 °C in NH 3 ambient before HfO 2 deposition improved the carrier trapping characteristics.

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