Interfacial characteristics of HfO 2 grown on nitrided Ge (100) substrates by atomic-layer deposition

Hyoungsub Kim, Paul C. McIntyre, Chi On Chui, Krishna C. Saraswat, Mann Ho Cho

Research output: Contribution to journalArticlepeer-review

138 Citations (Scopus)


The investigation of the microstructural and electrical properties of Ge-based metal-oxide-semiconductor capacitors containing high-k gate dielectric layers, with and and without the presence of a GeO xN y interface layer, was discussed. The effect of nitride layer nitride layer on thermal stability of the metal oxide/Ge structures was probed by using medium energy ion energy spectroscopy (MEIS). It was shown that atomic-layer deposited HfO 2 on a chemical oxide-terminated Ge (100) surface exhibited poor capacitance-voltage behavior. The direct substrate surface nitridation at 600 °C in NH 3 ambient before HfO 2 deposition improved the carrier trapping characteristics.

Original languageEnglish
Pages (from-to)2902-2904
Number of pages3
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2004 Oct 4

Bibliographical note

Funding Information:
This research was supported in part by the NSF/SRC Center for Environmentally Benign Semiconductor Manufacturing, Award No. Q423740, by an IBM Faculty Award, by a Mayfield Stanford Graduate Fellowship, and by the Intel Foundation Ph.D. Fellowship.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Interfacial characteristics of HfO 2 grown on nitrided Ge (100) substrates by atomic-layer deposition'. Together they form a unique fingerprint.

Cite this