Interfacial bonding distribution and energy band structure of (Gd                          2                         O                         3                         )                         1 - x                         (SiO                         2                         )                         x                          (x = 0.5)/GaAs (0 0 1) system

Jun Kyu Yang; Min Gu Kang; Woo Sik Kim; Hyung Ho Park

doi:10.1016/S0169-4332(04)00982-1

Interfacial bonding distribution and energy band structure of (Gd ₂ O ₃ ) _{1 - x} (SiO ₂ ) _x (x = 0.5)/GaAs (0 0 1) system

Jun Kyu Yang, Min Gu Kang, Woo Sik Kim, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A (Gd ₂ O ₃ ) _{1 - x} (SiO ₂ ) _x (x = 0.5) gate dielectric film was deposited on an n-GaAs (001) substrate at various substrate temperatures. Bonding distribution of interfacial Ga and As was characterized by comparing the 3d and 3p photoelectron lines. Surface passivation using (NH ₄ ) ₂ S was employed to preserve a stable interface. Interfacial GaAs oxide was not formed after the deposition, since bonding transition from As-S to Ga-S bonds provides thermal stability and protective effect against oxidation. While, without the passivation, interfacial GaAs-oxides were continuously grown as the substrate temperature was increased. The energy band gap of (Gd ₂ O ₃ ) _0.5 (SiO ₂ ) _0.5 was defined as 6.8eV using energy loss spectra of O 1s photoelectrons. The valence band maximum energy (E _VBM ) of (Gd ₂ O ₃ ) _0.5 (SiO ₂ ) _0.5 was determined to be 3.7eV. By arrangement of the measured energy bandgap and E _VBM , the energy band structure of (Gd ₂ O ₃ ) _0.5 (SiO ₂ ) _0.5 /GaAs system was demonstrated and an enhanced conduction band offset was observed.

Original language	English
Pages (from-to)	251-255
Number of pages	5
Journal	Applied Surface Science
Volume	237
Issue number	1-4
DOIs	https://doi.org/10.1016/S0169-4332(04)00982-1
Publication status	Published - 2004 Oct 15

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant. (KRF-2003-041-000375).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(04)00982-1

Cite this

Yang, J. K., Kang, M. G., Kim, W. S., & Park, H. H. (2004). Interfacial bonding distribution and energy band structure of (Gd ₂ O ₃ ) _{1 - x} (SiO ₂ ) _x (x = 0.5)/GaAs (0 0 1) system Applied Surface Science, 237(1-4), 251-255. https://doi.org/10.1016/S0169-4332(04)00982-1

Yang, Jun Kyu ; Kang, Min Gu ; Kim, Woo Sik et al. / Interfacial bonding distribution and energy band structure of (Gd ₂ O ₃ ) _{1 - x} (SiO ₂ ) _x (x = 0.5)/GaAs (0 0 1) system In: Applied Surface Science. 2004 ; Vol. 237, No. 1-4. pp. 251-255.

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title = " Interfacial bonding distribution and energy band structure of (Gd 2 O 3 ) 1 - x (SiO 2 ) x (x = 0.5)/GaAs (0 0 1) system ",

abstract = " A (Gd 2 O 3 ) 1 - x (SiO 2 ) x (x = 0.5) gate dielectric film was deposited on an n-GaAs (001) substrate at various substrate temperatures. Bonding distribution of interfacial Ga and As was characterized by comparing the 3d and 3p photoelectron lines. Surface passivation using (NH 4 ) 2 S was employed to preserve a stable interface. Interfacial GaAs oxide was not formed after the deposition, since bonding transition from As-S to Ga-S bonds provides thermal stability and protective effect against oxidation. While, without the passivation, interfacial GaAs-oxides were continuously grown as the substrate temperature was increased. The energy band gap of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was defined as 6.8eV using energy loss spectra of O 1s photoelectrons. The valence band maximum energy (E VBM ) of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was determined to be 3.7eV. By arrangement of the measured energy bandgap and E VBM , the energy band structure of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 /GaAs system was demonstrated and an enhanced conduction band offset was observed.",

author = "Yang, {Jun Kyu} and Kang, {Min Gu} and Kim, {Woo Sik} and Park, {Hyung Ho}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant. (KRF-2003-041-000375). ",

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Yang, JK, Kang, MG, Kim, WS & Park, HH 2004, ' Interfacial bonding distribution and energy band structure of (Gd ₂ O ₃ ) _{1 - x} (SiO ₂ ) _x (x = 0.5)/GaAs (0 0 1) system ', Applied Surface Science, vol. 237, no. 1-4, pp. 251-255. https://doi.org/10.1016/S0169-4332(04)00982-1

Interfacial bonding distribution and energy band structure of (Gd ₂ O ₃ ) _{1 - x} (SiO ₂ ) _x (x = 0.5)/GaAs (0 0 1) system . / Yang, Jun Kyu; Kang, Min Gu; Kim, Woo Sik et al.
In: Applied Surface Science, Vol. 237, No. 1-4, 15.10.2004, p. 251-255.

Research output: Contribution to journal › Article › peer-review

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T1 - Interfacial bonding distribution and energy band structure of (Gd 2 O 3 ) 1 - x (SiO 2 ) x (x = 0.5)/GaAs (0 0 1) system

AU - Yang, Jun Kyu

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AU - Kim, Woo Sik

AU - Park, Hyung Ho

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N2 - A (Gd 2 O 3 ) 1 - x (SiO 2 ) x (x = 0.5) gate dielectric film was deposited on an n-GaAs (001) substrate at various substrate temperatures. Bonding distribution of interfacial Ga and As was characterized by comparing the 3d and 3p photoelectron lines. Surface passivation using (NH 4 ) 2 S was employed to preserve a stable interface. Interfacial GaAs oxide was not formed after the deposition, since bonding transition from As-S to Ga-S bonds provides thermal stability and protective effect against oxidation. While, without the passivation, interfacial GaAs-oxides were continuously grown as the substrate temperature was increased. The energy band gap of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was defined as 6.8eV using energy loss spectra of O 1s photoelectrons. The valence band maximum energy (E VBM ) of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was determined to be 3.7eV. By arrangement of the measured energy bandgap and E VBM , the energy band structure of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 /GaAs system was demonstrated and an enhanced conduction band offset was observed.

AB - A (Gd 2 O 3 ) 1 - x (SiO 2 ) x (x = 0.5) gate dielectric film was deposited on an n-GaAs (001) substrate at various substrate temperatures. Bonding distribution of interfacial Ga and As was characterized by comparing the 3d and 3p photoelectron lines. Surface passivation using (NH 4 ) 2 S was employed to preserve a stable interface. Interfacial GaAs oxide was not formed after the deposition, since bonding transition from As-S to Ga-S bonds provides thermal stability and protective effect against oxidation. While, without the passivation, interfacial GaAs-oxides were continuously grown as the substrate temperature was increased. The energy band gap of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was defined as 6.8eV using energy loss spectra of O 1s photoelectrons. The valence band maximum energy (E VBM ) of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was determined to be 3.7eV. By arrangement of the measured energy bandgap and E VBM , the energy band structure of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 /GaAs system was demonstrated and an enhanced conduction band offset was observed.

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Yang JK, Kang MG, Kim WS, Park HH. Interfacial bonding distribution and energy band structure of (Gd ₂ O ₃ ) _{1 - x} (SiO ₂ ) _x (x = 0.5)/GaAs (0 0 1) system Applied Surface Science. 2004 Oct 15;237(1-4):251-255. doi: 10.1016/S0169-4332(04)00982-1