In this paper, we examined the effects of two different oxidants (H 2O and O 3) used during the atomic layer deposition (ALD) of HfO 2 films on GaAs, particularly focusing on its interfacial and electrical properties. In comparison with the H 2O-based ALD process, the O 3-based process produced a large amount of elemental As and Ga-O related bonds near the HfO 2/GaAs interface due to its stronger oxidizing power. High interface state and border trap densities of the O 3-based sample degraded the low-field electrical stability, which was confirmed by the capacitance and leakage current measurements under various voltage-stressing conditions. However, in terms of high-field stability, the O 3-based sample showed a much stronger resistance to stress-induced trap generation than the H 2O-based sample.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films