Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

Young Chul Byun; Chandreswar Mahata; Chee Hong An; Jungwoo Oh; Rino Choi; Hyoungsub Kim

doi:10.1088/0022-3727/45/43/435305

Interfacial and electrical properties of HfO ₂ gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

Young Chul Byun, Chandreswar Mahata, Chee Hong An, Jungwoo Oh, Rino Choi, Hyoungsub Kim

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

In this paper, we examined the effects of two different oxidants (H ₂O and O ₃) used during the atomic layer deposition (ALD) of HfO ₂ films on GaAs, particularly focusing on its interfacial and electrical properties. In comparison with the H ₂O-based ALD process, the O ₃-based process produced a large amount of elemental As and Ga-O related bonds near the HfO ₂/GaAs interface due to its stronger oxidizing power. High interface state and border trap densities of the O ₃-based sample degraded the low-field electrical stability, which was confirmed by the capacitance and leakage current measurements under various voltage-stressing conditions. However, in terms of high-field stability, the O ₃-based sample showed a much stronger resistance to stress-induced trap generation than the H ₂O-based sample.

Original language	English
Article number	435305
Journal	Journal of Physics D: Applied Physics
Volume	45
Issue number	43
DOIs	https://doi.org/10.1088/0022-3727/45/43/435305
Publication status	Published - 2012 Oct 31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/45/43/435305

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title = "Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants",

abstract = "In this paper, we examined the effects of two different oxidants (H 2O and O 3) used during the atomic layer deposition (ALD) of HfO 2 films on GaAs, particularly focusing on its interfacial and electrical properties. In comparison with the H 2O-based ALD process, the O 3-based process produced a large amount of elemental As and Ga-O related bonds near the HfO 2/GaAs interface due to its stronger oxidizing power. High interface state and border trap densities of the O 3-based sample degraded the low-field electrical stability, which was confirmed by the capacitance and leakage current measurements under various voltage-stressing conditions. However, in terms of high-field stability, the O 3-based sample showed a much stronger resistance to stress-induced trap generation than the H 2O-based sample.",

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AU - Byun, Young Chul

AU - Mahata, Chandreswar

AU - An, Chee Hong

AU - Oh, Jungwoo

AU - Choi, Rino

AU - Kim, Hyoungsub

PY - 2012/10/31

Y1 - 2012/10/31

N2 - In this paper, we examined the effects of two different oxidants (H 2O and O 3) used during the atomic layer deposition (ALD) of HfO 2 films on GaAs, particularly focusing on its interfacial and electrical properties. In comparison with the H 2O-based ALD process, the O 3-based process produced a large amount of elemental As and Ga-O related bonds near the HfO 2/GaAs interface due to its stronger oxidizing power. High interface state and border trap densities of the O 3-based sample degraded the low-field electrical stability, which was confirmed by the capacitance and leakage current measurements under various voltage-stressing conditions. However, in terms of high-field stability, the O 3-based sample showed a much stronger resistance to stress-induced trap generation than the H 2O-based sample.

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Interfacial and electrical properties of HfO ₂ gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

Abstract

All Science Journal Classification (ASJC) codes

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