Interface sensitive photocurrent spectrum of ZnSe/GaAs heterostructure with laser illumination

J. H. Song; E. D. Sim; Y. S. Joh; J. H. Park; K. S. Baek; H. N. Oak; S. K. Chang

doi:10.1002/1521-3951(200201)229:1<123::AID-PSSB123>3.0.CO;2-B

Interface sensitive photocurrent spectrum of ZnSe/GaAs heterostructure with laser illumination

J. H. Song, E. D. Sim, Y. S. Joh, J. H. Park, K. S. Baek, H. N. Oak, S. K. Chang

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have performed new modulation photocurrent (PC) and current-voltage (I-V) measurements on 1 μm thick ZnSe epilayers grown on a (100) GaAs substrate, which are sensitive to interfacial properties. When the sample was modulated by the pump beam whose energy is between that of the ZnSe and GaAs bandgaps, the intensity of the PC signals only above the ZnSe absorption edge increased. Through the analysis on the modulation mechanism we showed the existence of trap states at the interface and its strong influence on the current flow in the epilayers. In addition, we observed states localized at the interface by the modulated PC spectrum. The possible mechanisms of the modulation were also discussed.

Original language	English
Pages (from-to)	123-126
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	229
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200201)229:1<123::AID-PSSB123>3.0.CO;2-B
Publication status	Published - 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(200201)229:1<123::AID-PSSB123>3.0.CO;2-B

Cite this

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abstract = "We have performed new modulation photocurrent (PC) and current-voltage (I-V) measurements on 1 μm thick ZnSe epilayers grown on a (100) GaAs substrate, which are sensitive to interfacial properties. When the sample was modulated by the pump beam whose energy is between that of the ZnSe and GaAs bandgaps, the intensity of the PC signals only above the ZnSe absorption edge increased. Through the analysis on the modulation mechanism we showed the existence of trap states at the interface and its strong influence on the current flow in the epilayers. In addition, we observed states localized at the interface by the modulated PC spectrum. The possible mechanisms of the modulation were also discussed.",

author = "Song, {J. H.} and Sim, {E. D.} and Joh, {Y. S.} and Park, {J. H.} and Baek, {K. S.} and Oak, {H. N.} and Chang, {S. K.}",

year = "2002",

doi = "10.1002/1521-3951(200201)229:1<123::AID-PSSB123>3.0.CO;2-B",

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T1 - Interface sensitive photocurrent spectrum of ZnSe/GaAs heterostructure with laser illumination

AU - Song, J. H.

AU - Sim, E. D.

AU - Joh, Y. S.

AU - Park, J. H.

AU - Baek, K. S.

AU - Oak, H. N.

AU - Chang, S. K.

PY - 2002

Y1 - 2002

N2 - We have performed new modulation photocurrent (PC) and current-voltage (I-V) measurements on 1 μm thick ZnSe epilayers grown on a (100) GaAs substrate, which are sensitive to interfacial properties. When the sample was modulated by the pump beam whose energy is between that of the ZnSe and GaAs bandgaps, the intensity of the PC signals only above the ZnSe absorption edge increased. Through the analysis on the modulation mechanism we showed the existence of trap states at the interface and its strong influence on the current flow in the epilayers. In addition, we observed states localized at the interface by the modulated PC spectrum. The possible mechanisms of the modulation were also discussed.

AB - We have performed new modulation photocurrent (PC) and current-voltage (I-V) measurements on 1 μm thick ZnSe epilayers grown on a (100) GaAs substrate, which are sensitive to interfacial properties. When the sample was modulated by the pump beam whose energy is between that of the ZnSe and GaAs bandgaps, the intensity of the PC signals only above the ZnSe absorption edge increased. Through the analysis on the modulation mechanism we showed the existence of trap states at the interface and its strong influence on the current flow in the epilayers. In addition, we observed states localized at the interface by the modulated PC spectrum. The possible mechanisms of the modulation were also discussed.

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Interface sensitive photocurrent spectrum of ZnSe/GaAs heterostructure with laser illumination

Abstract

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