Interface roughness effect between gate oxide and metal gate on dielectric property

J. Y. Son; W. J. Maeng; Woo Hee Kim; Y. H. Shin; Hyungjun Kim

doi:10.1016/j.tsf.2009.01.117

Interface roughness effect between gate oxide and metal gate on dielectric property

J. Y. Son, W. J. Maeng, Woo Hee Kim, Y. H. Shin, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We report a simple theoretical model based on experimental data about the interface roughness effect between gate oxide and metal gate on dielectric. From the analytic approach, we confirm that the increase in interface roughness generates the decrease in the dielectric constant as well as the increase in the leakage current. We checked the interface roughness effect between high-κ HfO₂ gate oxides and Ru gates by atomic layer deposition (ALD) and physical vapor deposition (PVD). The ALD Ru gate showed better dielectric properties (high dielectric constant and low leakage current) and lower interface roughness than the PVD Ru metal gate.

Original language	English
Pages (from-to)	3892-3895
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.01.117
Publication status	Published - 2009 May 29

Bibliographical note

Funding Information:
The authors gratefully acknowledge the financial support of Korea Electronic Technology Institute, System IC 2010 program, POSTECH (core research program), and the Brain Korea 21 project in 2008.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.01.117

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title = "Interface roughness effect between gate oxide and metal gate on dielectric property",

abstract = "We report a simple theoretical model based on experimental data about the interface roughness effect between gate oxide and metal gate on dielectric. From the analytic approach, we confirm that the increase in interface roughness generates the decrease in the dielectric constant as well as the increase in the leakage current. We checked the interface roughness effect between high-κ HfO2 gate oxides and Ru gates by atomic layer deposition (ALD) and physical vapor deposition (PVD). The ALD Ru gate showed better dielectric properties (high dielectric constant and low leakage current) and lower interface roughness than the PVD Ru metal gate.",

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note = "Funding Information: The authors gratefully acknowledge the financial support of Korea Electronic Technology Institute, System IC 2010 program, POSTECH (core research program), and the Brain Korea 21 project in 2008.",

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doi = "10.1016/j.tsf.2009.01.117",

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T1 - Interface roughness effect between gate oxide and metal gate on dielectric property

AU - Son, J. Y.

AU - Maeng, W. J.

AU - Kim, Woo Hee

AU - Shin, Y. H.

AU - Kim, Hyungjun

N1 - Funding Information: The authors gratefully acknowledge the financial support of Korea Electronic Technology Institute, System IC 2010 program, POSTECH (core research program), and the Brain Korea 21 project in 2008.

PY - 2009/5/29

Y1 - 2009/5/29

N2 - We report a simple theoretical model based on experimental data about the interface roughness effect between gate oxide and metal gate on dielectric. From the analytic approach, we confirm that the increase in interface roughness generates the decrease in the dielectric constant as well as the increase in the leakage current. We checked the interface roughness effect between high-κ HfO2 gate oxides and Ru gates by atomic layer deposition (ALD) and physical vapor deposition (PVD). The ALD Ru gate showed better dielectric properties (high dielectric constant and low leakage current) and lower interface roughness than the PVD Ru metal gate.

AB - We report a simple theoretical model based on experimental data about the interface roughness effect between gate oxide and metal gate on dielectric. From the analytic approach, we confirm that the increase in interface roughness generates the decrease in the dielectric constant as well as the increase in the leakage current. We checked the interface roughness effect between high-κ HfO2 gate oxides and Ru gates by atomic layer deposition (ALD) and physical vapor deposition (PVD). The ALD Ru gate showed better dielectric properties (high dielectric constant and low leakage current) and lower interface roughness than the PVD Ru metal gate.

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JO - Thin Solid Films

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IS - 14

ER -

Interface roughness effect between gate oxide and metal gate on dielectric property

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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