We report a simple theoretical model based on experimental data about the interface roughness effect between gate oxide and metal gate on dielectric. From the analytic approach, we confirm that the increase in interface roughness generates the decrease in the dielectric constant as well as the increase in the leakage current. We checked the interface roughness effect between high-κ HfO2 gate oxides and Ru gates by atomic layer deposition (ALD) and physical vapor deposition (PVD). The ALD Ru gate showed better dielectric properties (high dielectric constant and low leakage current) and lower interface roughness than the PVD Ru metal gate.
|Number of pages||4|
|Journal||Thin Solid Films|
|Publication status||Published - 2009 May 29|
Bibliographical noteFunding Information:
The authors gratefully acknowledge the financial support of Korea Electronic Technology Institute, System IC 2010 program, POSTECH (core research program), and the Brain Korea 21 project in 2008.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry