Interface control by modified sputtering on Pt/HfO2/Si system

Suheun Nam, Seok Woo Nam, Jung Ho Yoo, Dae Hong Ko

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Hafnium oxide (HfO2) thin films were deposited by two different sputtering methods. In one case, hafnium (Hf) metal layer was pre-deposited before reactive sputtering process (method A), with the object of suppressing growth of the interfacial layer. Another one is conventional reactive sputtering, using DC magnetron in Ar+O2 ambient (method B). Films made by method A showed thinner interlayer as well as good leakage current behavior, demonstrating that Hf pre-deposited layer can protect from incorporation of the oxidizing species. With high-temperature annealing, interfacial layer increases considerably, showing composition changes from silicate to SiO2 (method A). In contrast, films by method B displayed little change in interlayer thickness since there exists previously thick SiOx bottom layer formed by O2 stabilizing before reactive sputtering. Equivalent oxide thickness (EOT) of as-deposited and annealed HfO2 films by method A is calculated to be ∼ 20 and ∼ 30 Å, respectively, with allowable level of leakage current density.

Original languageEnglish
Pages (from-to)123-127
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
Publication statusPublished - 2003 Sept 15
EventE-MRS 2002 Symposium E - Strasbourg, France
Duration: 2002 Jun 182002 Jun 21

Bibliographical note

Funding Information:
This work was partially supported by a scholarship grant from Korea Science and Engineering Foundation.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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