Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers

Zhihong Huang; Sanjay K. Banerjee; Jungwoo Oh; Joe C. Campbell

Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers

Zhihong Huang, Sanjay K. Banerjee, Jungwoo Oh, Joe C. Campbell

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73% quantum efficiency at 1.3μm. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers.

Original language	English
Title of host publication	2006 Digest of the LEOS Summer Topical Meetings
Pages	42-43
Number of pages	2
Publication status	Published - 2006
Event	2006 LEOS Summer Topical Meetings - Quebec City, QC, Canada Duration: 2006 Jul 17 → 2006 Jul 19

Publication series

Name	LEOS Summer Topical Meeting
ISSN (Print)	1099-4742

Other

Other	2006 LEOS Summer Topical Meetings
Country/Territory	Canada
City	Quebec City, QC
Period	06/7/17 → 06/7/19

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

@inproceedings{bba00ae3d54444c4a77001d4e333ec1e,

title = "Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers",

abstract = "An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73% quantum efficiency at 1.3μm. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers.",

author = "Zhihong Huang and Banerjee, {Sanjay K.} and Jungwoo Oh and Campbell, {Joe C.}",

year = "2006",

language = "English",

isbn = "1424400902",

series = "LEOS Summer Topical Meeting",

pages = "42--43",

booktitle = "2006 Digest of the LEOS Summer Topical Meetings",

note = "2006 LEOS Summer Topical Meetings ; Conference date: 17-07-2006 Through 19-07-2006",

}

TY - GEN

T1 - Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers

AU - Huang, Zhihong

AU - Banerjee, Sanjay K.

AU - Oh, Jungwoo

AU - Campbell, Joe C.

PY - 2006

Y1 - 2006

N2 - An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73% quantum efficiency at 1.3μm. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers.

AB - An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73% quantum efficiency at 1.3μm. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers.

UR - http://www.scopus.com/inward/record.url?scp=34547342570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547342570&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:34547342570

SN - 1424400902

SN - 9781424400904

T3 - LEOS Summer Topical Meeting

SP - 42

EP - 43

BT - 2006 Digest of the LEOS Summer Topical Meetings

T2 - 2006 LEOS Summer Topical Meetings

Y2 - 17 July 2006 through 19 July 2006

ER -

Interdigitated photodoide fabricated on high quality Ge on Si with thin SiGe buffer layers

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

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